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Contents

README

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NHDTA143ZTR

Nexperia · Digital Transistors · TO-236AB

NHDTA143ZTR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) of the built-in PNP transistor, applied through the 4.7 kΩ bias resistor R1; for the NHDTA143ZT the input voltage limit is -30 V to +7 V.
2 GND power_in GND (emitter) pin, the common reference for the input and the emitter of the built-in transistor.
3 O output Output (collector) pin; the output current is limited to -100 mA and the collector-emitter voltage VCEO to -80 V (open base).

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -80 V open emitter 3
collector-emitter voltage VCEO -80 V open base 3
emitter-base voltage VEBO -7 V open collector 3
input voltage (NHDTA143ZT) VI -30 7 V 3
output current IO -100 mA 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [1] 3
total power dissipation Ptot 350 mW Tamb ≤ 25 °C; FR4 PCB, 4-layer copper, standard footprint [2] 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance junction to ambient Rth(j-a) 500 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] 4
thermal resistance junction to ambient Rth(j-a) 358 K/W in free air; FR4 PCB, 4-layer copper, tin-plated, standard footprint [2] 4
thermal resistance junction to solder point Rth(j-sp) 130 K/W 4
collector-base breakdown voltage V(BR)CBO -80 V IC = -100 µA; IE = 0 A 5
collector-emitter breakdown voltage V(BR)CEO -80 V IC = -2 mA; IB = 0 A 5
collector-base cut-off current ICBO -100 nA VCB = -80 V; IE = 0 A 5
collector-emitter cut-off current ICEO -100 nA VCE = -60 V; IB = 0 A 5
collector-emitter cut-off current ICEO -5 µA VCE = -60 V; IB = 0 A; Tj = 150 °C 5
emitter-base cut-off current (NHDTA143ZT) IEBO -260 µA VEB = -7 V; IC = 0 A 5
DC current gain hFE 100 VCE = -5 V; IC = -10 mA 5
collector-emitter saturation voltage VCEsat -100 mV IC = -10 mA; IB = -0.5 mA 5
off-state input voltage (NHDTA143ZT) VI(off) -625 -500 mV VCE = -5 V; IC = -100 µA 5
on-state input voltage (NHDTA143ZT) VI(on) -1.4 -0.95 V VCE = -0.3 V; IC = -10 mA 5
bias resistor 1 (input) (NHDTA143ZT) R1 3.3 4.7 6.1 kΩ see footnote [1]: Test information section, resistor calculation and test conditions 5
bias resistor ratio (NHDTA143ZT) R2/R1 8 10 12 see footnote [1]: Test information section, resistor calculation and test conditions 5
transition frequency fT 150 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz; built-in transistor [2] 5
collector capacitance Cc 3 pF VCB = -10 V; IE = ie = 0 A; f = 1 MHz 5

CAD (KiCad official)

  • Symbol: NHDTA143ZTR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: nhdta143ztr-etched.step / nhdta143ztr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nhdta143ztr.step / nhdta143ztr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 7f259eb9524e0108, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF