# NDT456P

**UMW** · MOSFETs · SOT-223

NDT456P from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGSS). |
| 2 | D | passive | DRAIN terminal; drain-source voltage is rated -30 V (VDSS) with continuous drain current of -7.5 A, and the solder mounting surface of the drain pins is the thermal reference for RθJA. |
| 3 | S | passive | SOURCE terminal of the P-channel MOSFET, the reference for the ±20 V gate-source rating and the -30 V drain-source rating. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID=-250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-24V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS=-24V, VGS=0V, TJ=55°C | 3 |
| Gate-Body Leakage, Forward | IGSSF |  |  | 100 | nA | VGS=20V, VDS=0V | 3 |
| Gate-Body Leakage, Reverse | IGSSR |  |  | -100 | nA | VGS=-20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS, ID=-250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 25 | mΩ | VGS=-10V, ID=-7.5A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 30 | mΩ | VGS=-4.5V, ID=-6A | 3 |
| On-State Drain Current | ID(ON) | -10 |  |  | A | VGS=-10V, VDS=-5V | 3 |
| On-State Drain Current | ID(ON) | -2.5 |  |  | A | VGS=-4.5V, VDS=-5V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -2.5 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | -0.85 | -1.2 | V | VGS=0V, IS=-2.5A (Note 2) | 3 |
| Drain-Source Voltage | VDSS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | -7.5 | A | Note 1a | 1 |
| Drain Current - Pulsed |  | -20 |  | 20 | A |  | 1 |
| Power Dissipation for Single Operation | PD |  |  | 3 | W | Note 1a | 1 |
| Power Dissipation for Single Operation | PD |  |  | 1.3 | W | Note 1b | 1 |
| Power Dissipation for Single Operation | PD |  |  | 1.1 | W | Note 1c | 1 |
| Storage Temperature Range | TJ, TSTG | -65 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 42 | °C/W | Note 1a | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 12 | °C/W | Note 1 | 2 |

## CAD (KiCad official)

- Symbol: `NDT456P`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `ndt456p-etched.step` / `ndt456p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ndt456p.step` / `ndt456p.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755880007946383360) (10 pp, sha256 `d957787e80338b0a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ndt456p-datasheet.pdf)