main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers nds9958-nl-vb: viewers · Ray 12d ago
nds9958-nl-vb-etched.glb Publish 0.1.0 · Ray 12d ago
nds9958-nl-vb-etched.step nds9958-nl-vb: factory component page (tier=lcsc) · Ray 12d ago
nds9958-nl-vb-hero.glb nds9958-nl-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
nds9958-nl-vb-hero.overlay.json Publish 0.1.0 · Ray 12d ago
nds9958-nl-vb.glb Publish 0.1.0 · Ray 12d ago
nds9958-nl-vb.kicad_mod Publish 0.1.0 · Ray 12d ago
nds9958-nl-vb.kicad_sym Publish 0.1.0 · Ray 12d ago
nds9958-nl-vb.lbr Publish 0.1.0 · Ray 12d ago
nds9958-nl-vb.step Publish 0.1.0 · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago

NDS9958-NL-VB

VBsemi Elec · MOSFETs · SO-8

NDS9958-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1, shown on pin 1 of the SO-8 diagram.
2 G1 input Gate of MOSFET 1; gate-source voltage limit is ±20 V.
3 S2 passive Source of MOSFET 2, shown on pin 3 of the SO-8 diagram.
4 G2 input Gate of MOSFET 2; gate-source voltage limit is ±20 V.
5 D2 passive Drain of MOSFET 2 (pins 5 and 6 are tied); drain-source rating is 30 V (N-channel) or -30 V (P-channel).
6 D2 passive Drain of MOSFET 2 (pins 5 and 6 are tied); drain-source rating is 30 V (N-channel) or -30 V (P-channel).
7 D1 passive Drain of MOSFET 1 (pins 7 and 8 are tied); drain-source rating is 30 V (N-channel) or -30 V (P-channel).
8 D1 passive Drain of MOSFET 1 (pins 7 and 8 are tied); drain-source rating is 30 V (N-channel) or -30 V (P-channel).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V TA = 25 °C 1
Drain-Source Voltage (P-Ch) VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V both channels 1
Pulsed Drain Current (N-Ch) IDM 40 A 10 µs pulse width 1
Pulsed Drain Current (P-Ch) IDM -40 A 10 µs pulse width 1
Continuous Drain Current (N-Ch) ID 8 A TC = 25 °C, TJ = 150 °C, package limited 1
Continuous Drain Current (P-Ch) ID -8 A TC = 25 °C, TJ = 150 °C, package limited 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (N-Ch) RthJA 50 62.5 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance (P-Ch) RthJA 47 62.5 °C/W t ≤ 10 s 1
Junction-to-Foot Thermal Resistance (N-Ch) RthJF 30 40 °C/W Steady State 1
Junction-to-Foot Thermal Resistance (P-Ch) RthJF 29 38 °C/W Steady State 1
Drain-Source Breakdown Voltage (P-Ch) VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage (N-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-Body Leakage (P-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current (N-Ch) ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-Ch) ID(on) -20 A VDS = - 5 V, VGS = - 10 V 2
Gate Resistance (N-Ch) Rg 0.3 1 2.3 Ω f = 1 MHz 2
Gate Resistance (P-Ch) Rg 1.2 5.7 9.6 Ω f = 1 MHz 2
Body Diode Voltage (N-Ch) VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage (P-Ch) VSD -0.77 -1.2 V IS = - 2 A 3
Forward Transconductance (N-Ch) gfs 27 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance (P-Ch) gfs 25 S VDS = - 15 V, ID = - 6.7 A 2

CAD (KiCad official)

  • Symbol: NDS9958-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: nds9958-nl-vb-etched.step / nds9958-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds9958-nl-vb.step / nds9958-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 e50358c77a2d697c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF