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NDS9952A-NL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnds9952a-nl-vbfactory-2.0.0extractor-text

Verified NDS9952A-NL-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: NDS9952A-NL-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ov86pn7m/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.12)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ nds9952a-nl-vb.kicad_sym✓ nds9952a-nl-vb.kicad_mod✓ nds9952a-nl-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers nds9952a-nl-vb: viewers · Ray 3h ago
nds9952a-nl-vb-etched.glb Publish 0.1.0 · Ray 3h ago
nds9952a-nl-vb-etched.step nds9952a-nl-vb: factory component page (tier=lcsc) · Ray 3h ago
nds9952a-nl-vb-hero.glb nds9952a-nl-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
nds9952a-nl-vb-hero.overlay.json Publish 0.1.0 · Ray 3h ago
nds9952a-nl-vb.glb Publish 0.1.0 · Ray 3h ago
nds9952a-nl-vb.kicad_mod Publish 0.1.0 · Ray 3h ago
nds9952a-nl-vb.kicad_sym Publish 0.1.0 · Ray 3h ago
nds9952a-nl-vb.lbr Publish 0.1.0 · Ray 3h ago
nds9952a-nl-vb.step Publish 0.1.0 · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 3h ago

NDS9952A-NL-VB

VBsemi Elec · MOSFETs · SO-8

NDS9952A-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET channel 1 in the dual N- and P-channel 30 V device; the datasheet's absolute maximum VDS is 30 V and VGS is ±20 V.
2 G1 input Gate terminal of MOSFET channel 1; the datasheet limits gate-source voltage to ±20 V in the absolute maximum ratings.
3 S2 passive Source terminal of MOSFET channel 2 in the dual N- and P-channel 30 V device; the datasheet's absolute maximum VDS is 30 V and VGS is ±20 V.
4 G2 input Gate terminal of MOSFET channel 2; the datasheet limits gate-source voltage to ±20 V in the absolute maximum ratings.
5 D2 passive Drain terminal of MOSFET channel 2; the datasheet's absolute maximum VDS is 30 V and the pulsed drain current is rated up to 40 A.
6 D2 passive Drain terminal of MOSFET channel 2 (internally common with pin 5); the datasheet's absolute maximum VDS is 30 V and the pulsed drain current is rated up to 40 A.
7 D1 passive Drain terminal of MOSFET channel 1; the datasheet's absolute maximum VDS is 30 V and the pulsed drain current is rated up to 40 A.
8 D1 passive Drain terminal of MOSFET channel 1 (internally common with pin 7); the datasheet's absolute maximum VDS is 30 V and the pulsed drain current is rated up to 40 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V 1
Drain-Source Voltage (P-Channel) VDS -30 V 1
Gate-Source Voltage (N-Channel) VGS -20 20 V 1
Gate-Source Voltage (P-Channel) VGS -20 20 V 1
Continuous Drain Current (N-Channel) ID 8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current (P-Channel) ID -8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current (N-Channel) ID 6.8 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current (P-Channel) ID -6.8 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current (P-Channel) ID -6.6 A TA = 25 °C 1
Pulsed Drain Current (N-Channel) IDM 40 A 10 µs pulse width 1
Pulsed Drain Current (P-Channel) IDM -40 A 10 µs pulse width 1
Source-Drain Diode Current (N-Channel) IS 2.6 A TC = 25 °C 1
Source-Drain Diode Current (P-Channel) IS -2.6 A TC = 25 °C 1
Source-Drain Diode Current (N-Channel) IS 1.6 A TA = 25 °C 1
Source-Drain Diode Current (P-Channel) IS -1.6 A TA = 25 °C 1
Pulsed Source-Drain Current (N-Channel) ISM 40 A 1
Pulsed Source-Drain Current (P-Channel) ISM -40 A 1
Single Pulse Avalanche Current (N-Channel) IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Channel) IAS -20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ 1
Maximum Power Dissipation (N-Channel) PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation (P-Channel) PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation (N-Channel) PD 2 W TA = 25 °C 1
Maximum Power Dissipation (P-Channel) PD 2 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Channel) RthJA 50 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (P-Channel) RthJA 47 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient, steady state (N-Channel) RthJA 120 °C/W Steady state (footnote d) 1
Maximum Junction-to-Ambient, steady state (P-Channel) RthJA 110 °C/W Steady state (footnote d) 1
Maximum Junction-to-Foot (Drain) (N-Channel) RthJF 30 40 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) (P-Channel) RthJF 29 38 °C/W Steady state 1
Drain-Source Breakdown Voltage (N-Channel) VDS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Channel) VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -2 -1 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate-Body Leakage (P-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -30 V, VGS = 0 V 2
On-State Drain Current (N-Channel) ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-Channel) ID(on) -20 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A 2
Turn-On Delay Time (N-Channel, VGS = 10 V) td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Channel, VGS = -10 V) td(on) 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time (N-Channel, VGS = 10 V) tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time (P-Channel, VGS = -10 V) tr 9 15 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Channel, VGS = -10 V) td(off) 23 26 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time (N-Channel, VGS = 10 V) tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time (P-Channel, VGS = -10 V) tf 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Body Diode Voltage (N-Channel) VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage (P-Channel) VSD -0.77 -1.2 V IS = -2 A 3
Body Diode Reverse Recovery Charge (N-Channel) Qrr 10 17 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge (P-Channel) Qrr 29 47 nC IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time (P-Channel) trr 31 57 ns IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: NDS9952A-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: nds9952a-nl-vb-etched.step / nds9952a-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds9952a-nl-vb.step / nds9952a-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 d9ddcf47f72f334e, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF