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NDS9945-NL-JSM

JSMSEMI · MOSFETs · SOP-8

NDS9945-NL-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (channel rated VDS 60V, ID 4.5A).
2 G1 input Gate of MOSFET 1, with VGS rated ±20V.
3 S2 passive Source of MOSFET 2 (channel rated VDS 60V, ID 4.5A).
4 G2 input Gate of MOSFET 2, with VGS rated ±20V.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6; VDS rated 60V.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5; VDS rated 60V.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8; VDS rated 60V.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7; VDS rated 60V.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=48V,TJ=25℃ 2
Zero Gate Voltage Drain Current IDSS 5 μA VGS=0V, VDS=48V,TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 30 36 mΩ VGS=10V,ID=4A 2
Drain-Source On Resistance RDS(ON) 34 45 mΩ VGS=4.5V,ID=3A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1A,TJ=25℃ 3
Continuous Source Current IS 4.5 A VG=VD=0V , Force Current 3
Pulsed Source Current ISM 18 A 3
Drain-Source Voltage VDS 60 V Ta=25℃ 1
Gate-Source Voltage VGS -20 20 V Ta=25℃ 1
Continuous Drain Current ID 4.5 A TA=25℃ 1
Continuous Drain Current ID 3.5 A TA=70℃ 1
Drain Current-Pulsed IDM 18 A Ta=25℃ 1
Single Pulse Avalanche Energy EAS 22 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=21A 1
Avalanche Current IAS 21 A Ta=25℃ 1
Power Dissipation PD 1.5 W Ta=25℃ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RθJA 85 ℃/W 1
Thermal Resistance, Junction to Case RθJC 25 ℃/W 2
Forward Transconductance GFS 28.3 S VDS=5V, ID=4A 2
Input Capacitance Ciss 1020 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 60 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 45 pF VDS=15V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 3 ns VDD=30V, ID=4A, RG=3.3Ω, VGS=10V 2
Rise Time tr 34 ns VDD=30V, ID=4A, RG=3.3Ω, VGS=10V 2
Turn-Off Delay Time td(off) 23 ns VDD=30V, ID=4A, RG=3.3Ω, VGS=10V 2
Fall Time tf 6 ns VDD=30V, ID=4A, RG=3.3Ω, VGS=10V 2
Total Gate Charge Qg 19 nC VGS=10V, VDS=48V, ID=4A 2
Gate-Source Charge Qgs 2.6 nC VGS=10V, VDS=48V, ID=4A 2
Gate-Drain Miller Charge Qgd 4.1 nC VGS=10V, VDS=48V, ID=4A 3
Gate Resistance RG 2.5 Ω VDS=0V , VGS=0V , f=1MHz 3
Reverse Recovery Time Trr 12.1 ns IF=4A , dI/dt=100A/µs , TJ=25℃ 3
Reverse Recovery Charge Qrr 6.7 nC IF=4A , dI/dt=100A/µs , TJ=25℃ 3

CAD (KiCad official)

  • Symbol: NDS9945-NL-JSM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nds9945-nl-jsm-etched.step / nds9945-nl-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds9945-nl-jsm.step / nds9945-nl-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (6 pp, sha256 9580e8854fd408a6, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF