# NDS9407

**onsemi** · MOSFETs · SO-8

NDS9407 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDSS -60 V, VGSS ±20 V). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDSS -60 V, VGSS ±20 V). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no pin-specific limit, and the device ratings apply (VDSS -60 V, VGSS ±20 V). |
| 4 | G | input | Gate terminal; gate-source voltage is rated at ±20 V (VGSS), and the datasheet cites a gate drive range of 4.5 V to 20 V. |
| 5 | D | passive | Drain terminal; drain-source voltage is rated at -60 V and continuous drain current at -3.0 A (TA = 25 °C). |
| 6 | D | passive | Drain terminal; drain-source voltage is rated at -60 V and continuous drain current at -3.0 A (TA = 25 °C). |
| 7 | D | passive | Drain terminal; drain-source voltage is rated at -60 V and continuous drain current at -3.0 A (TA = 25 °C). |
| 8 | D | passive | Drain terminal; drain-source voltage is rated at -60 V and continuous drain current at -3.0 A (TA = 25 °C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | -60 | V | TA=25°C unless otherwise noted | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Drain Current, Continuous | ID |  |  | -3 | A | Note 1a | 2 |
| Drain Current, Pulsed | ID |  |  | -12 | A |  | 2 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | Note 1a | 2 |
| Maximum Power Dissipation | PD |  |  | 1.2 | W | Note 1b | 2 |
| Maximum Power Dissipation | PD |  |  | 1 | W | Note 1c | 2 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 50 | °C/W | Note 1a | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 125 | °C/W | Note 1c | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 25 | °C/W | Note 1 | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS = 0 V, ID = -250 µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -48 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = -48 V, VGS = 0 V, TJ = 55°C | 3 |
| Gate-Body Leakage, Forward | IGSSF |  |  | 100 | nA | VGS = 20 V, VDS = 0 V | 3 |
| Gate-Body Leakage, Reverse | IGSSR |  |  | -100 | nA | VGS = -20 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -3 | V | VDS = VGS, ID = -250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 78 | 150 | mΩ | VGS = -10 V, ID = -3.0 A | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 99 | 240 | mΩ | VGS = -4.5 V, ID = -1.6 A | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 122 | 250 | mΩ | VGS = -10 V, ID = -3.0 A, TJ = 125°C | 3 |
| On-State Drain Current | ID(on) | -12 |  |  | A | VGS = -10 V, VDS = -5 V | 3 |
| Turn-On Delay Time | td(on) |  | 8 | 16 | ns | VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω | 3 |
| Turn-On Rise Time | tr |  | 11 | 20 | ns | VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 10 | 20 | ns | VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω | 3 |
| Turn-Off Fall Time | tf |  | 10 | 20 | ns | VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω | 3 |
| Total Gate Charge | Qg |  | 16 | 22 | nC | VDS = -30 V, ID = -3.0 A, VGS = -10 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -2.1 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS = 0 V, IS = -2.1 A (Note 2) | 3 |

## CAD (KiCad official)

- Symbol: `NDS9407`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `nds9407-etched.step` / `nds9407-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nds9407.step` / `nds9407.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588942798846365697) (6 pp, sha256 `4c5e3f0d1fda7cf5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nds9407-datasheet.pdf)