component
NDS8958-NL-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NDS8958-NL-VB
VBsemi Elec · MOSFETs · SO-8
NDS8958-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET; the N-channel VDS rating is 30 V and the gate-source rating is ±20 V. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET; the P-channel VDS rating is -30 V and the gate-source rating is ±20 V. |
| 4 | G2 | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of the P-channel MOSFET; the device operates with a junction and storage temperature range of -55 to 150 °C. |
| 6 | D2 | passive | Drain terminal of the P-channel MOSFET (second drain pin of the same device); the device operates with a junction and storage temperature range of -55 to 150 °C. |
| 7 | D1 | passive | Drain terminal of the N-channel MOSFET; the device operates with a junction and storage temperature range of -55 to 150 °C. |
| 8 | D1 | passive | Drain terminal of the N-channel MOSFET (second drain pin of the same device); the device operates with a junction and storage temperature range of -55 to 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N and P) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-channel) | ID | 8 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (P-channel) | ID | -8 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (N-channel) | ID | 6.8 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current (P-channel) | ID | -6.8 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current (P-channel) | ID | -6.6 | A | TA = 25 °C | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 40 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -40 | A | 10 µs pulse width | 1 | ||
| Source-Drain Diode Current (N-channel) | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Diode Current (P-channel) | IS | -2.6 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current (N-channel) | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-channel) | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 520 | mJ | 1 | |||
| Maximum Power Dissipation (N-channel) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 3.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 2 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 2 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-channel) | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient (P-channel) | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) (N-channel) | RthJF | 30 | 40 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) (P-channel) | RthJF | 29 | 38 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Ambient steady state (N-channel, note d) | RthJA | 120 | °C/W | Steady state | 1 | ||
| Maximum Junction-to-Ambient steady state (P-channel, note d) | RthJA | 110 | °C/W | Steady state | 1 | ||
| Drain-Source Breakdown Voltage (N-channel) | V(BR)DSS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-channel) | V(BR)DSS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -2 | -1 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage (N-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Gate-Body Leakage (P-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-channel) | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-channel) | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 | ||
| Drain-Source On-State Resistance (N-channel) | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 | ||
| Drain-Source On-State Resistance (P-channel) | RDS(on) | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 | ||
| Total Gate Charge (N-channel) | Qg | 10 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 | ||
| Total Gate Charge (P-channel) | Qg | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A | 2 | ||
| Turn-On Delay Time (N-channel) | td(on) | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | ||
| Turn-On Delay Time (P-channel) | td(on) | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | ||
| Rise Time (N-channel) | tr | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | ||
| Rise Time (P-channel) | tr | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | ||
| Turn-Off Delay Time (P-channel) | td(off) | 26 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | ||
| Fall Time (N-channel) | tf | 9 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | ||
| Fall Time (P-channel) | tf | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 | ||
| Gate Resistance (N-channel) | Rg | 0.3 | 1 | 2.3 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-channel) | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage (N-channel) | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body Diode Voltage (P-channel) | VSD | -1.2 | -0.77 | V | IS = -2 A | 3 | |
| Body Diode Reverse Recovery Time (N-channel) | trr | 2 | 25 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time (P-channel) | trr | 31 | 57 | ns | IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge (N-channel) | Qrr | 10 | 17 | nC | 3 | ||
| Body Diode Reverse Recovery Charge (P-channel) | Qrr | 29 | 47 | nC | 3 |
CAD (KiCad official)
- Symbol:
NDS8958-NL-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
nds8958-nl-vb-etched.step/nds8958-nl-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nds8958-nl-vb.step/nds8958-nl-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
5f4147111ac2e1bc, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NDS8958-NL-VB
**VBsemi Elec** · MOSFETs · SO-8
NDS8958-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET; the N-channel VDS rating is 30 V and the gate-source rating is ±20 V. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET; the P-channel VDS rating is -30 V and the gate-source rating is ±20 V. |
| 4 | G2 | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | D2 | passive | Drain terminal of the P-channel MOSFET; the device operates with a junction and storage temperature range of -55 to 150 °C. |
| 6 | D2 | passive | Drain terminal of the P-channel MOSFET (second drain pin of the same device); the device operates with a junction and storage temperature range of -55 to 150 °C. |
| 7 | D1 | passive | Drain terminal of the N-channel MOSFET; the device operates with a junction and storage temperature range of -55 to 150 °C. |
| 8 | D1 | passive | Drain terminal of the N-channel MOSFET (second drain pin of the same device); the device operates with a junction and storage temperature range of -55 to 150 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | | 1 |
| Drain-Source Voltage (P-channel) | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage (N and P) | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (N-channel) | ID | | | 8 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current (P-channel) | ID | -8 | | | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current (N-channel) | ID | | | 6.8 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current (P-channel) | ID | -6.8 | | | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current (P-channel) | ID | -6.6 | | | A | TA = 25 °C | 1 |
| Pulsed Drain Current (N-channel) | IDM | | | 40 | A | 10 µs pulse width | 1 |
| Pulsed Drain Current (P-channel) | IDM | -40 | | | A | 10 µs pulse width | 1 |
| Source-Drain Diode Current (N-channel) | IS | | | 2.6 | A | TC = 25 °C | 1 |
| Source-Drain Diode Current (P-channel) | IS | -2.6 | | | A | TC = 25 °C | 1 |
| Single Pulse Avalanche Current (N-channel) | IAS | | | 10 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Current (P-channel) | IAS | -20 | | | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 520 | mJ | | 1 |
| Maximum Power Dissipation (N-channel) | PD | | | 3.1 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (P-channel) | PD | | | 3.2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (N-channel) | PD | | | 2 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation (P-channel) | PD | | | 2 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (N-channel) | RthJA | | 50 | 62.5 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient (P-channel) | RthJA | | 47 | 62.5 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Foot (Drain) (N-channel) | RthJF | | 30 | 40 | °C/W | Steady State | 1 |
| Maximum Junction-to-Foot (Drain) (P-channel) | RthJF | | 29 | 38 | °C/W | Steady State | 1 |
| Maximum Junction-to-Ambient steady state (N-channel, note d) | RthJA | | | 120 | °C/W | Steady state | 1 |
| Maximum Junction-to-Ambient steady state (P-channel, note d) | RthJA | | | 110 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage (N-channel) | V(BR)DSS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Drain-Source Breakdown Voltage (P-channel) | V(BR)DSS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -2 | | -1 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Gate-Body Leakage (P-channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | | | µA | VDS = -30 V, VGS = 0 V | 2 |
| On-State Drain Current (N-channel) | ID(on) | 20 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-channel) | ID(on) | -20 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.02 | Ω | VGS = 8 V, ID = 6.7 A | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(on) | | | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 |
| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.04 | Ω | VGS = -10 V, ID = -8 A | 2 |
| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.044 | Ω | VGS = -8 V, ID = -6.5 A | 2 |
| Drain-Source On-State Resistance (P-channel) | RDS(on) | | | 0.05 | Ω | VGS = -4.5 V, ID = -5 A | 2 |
| Total Gate Charge (N-channel) | Qg | | | 10 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 |
| Total Gate Charge (P-channel) | Qg | | | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A | 2 |
| Turn-On Delay Time (N-channel) | td(on) | | | 8 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Turn-On Delay Time (P-channel) | td(on) | | | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Rise Time (N-channel) | tr | | | 17 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Rise Time (P-channel) | tr | | | 15 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time (P-channel) | td(off) | | | 26 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Fall Time (N-channel) | tf | | | 9 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Fall Time (P-channel) | tf | | | 16 | ns | VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Gate Resistance (N-channel) | Rg | 0.3 | 1 | 2.3 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-channel) | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage (N-channel) | VSD | | 0.81 | 1.2 | V | IS = 5.4 A | 3 |
| Body Diode Voltage (P-channel) | VSD | -1.2 | -0.77 | | V | IS = -2 A | 3 |
| Body Diode Reverse Recovery Time (N-channel) | trr | | 2 | 25 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 |
| Body Diode Reverse Recovery Time (P-channel) | trr | | 31 | 57 | ns | IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C | 3 |
| Body Diode Reverse Recovery Charge (N-channel) | Qrr | | 10 | 17 | nC | | 3 |
| Body Diode Reverse Recovery Charge (P-channel) | Qrr | | 29 | 47 | nC | | 3 |
## CAD (KiCad official)
- Symbol: `NDS8958-NL-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `nds8958-nl-vb-etched.step` / `nds8958-nl-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nds8958-nl-vb.step` / `nds8958-nl-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/nds8958-nl-vb-datasheet.pdf) (14 pp, sha256 `5f4147111ac2e1bc`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/nds8958-nl-vb-datasheet.pdf)