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Contents

README

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NDS8435A

UMW · MOSFETs · SOP-8

NDS8435A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source connections.
2 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source connections.
3 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source connections.
4 G input Gate terminal of the MOSFET; gate-source voltage is rated ±20 V (VGSS).
5 D passive Drain terminal of the MOSFET; drain-source voltage is rated -30 V (VDSS), and the drain pins form the solder mounting surface used as the thermal reference.
6 D passive Drain terminal of the MOSFET; drain-source voltage is rated -30 V (VDSS), and the drain pins form the solder mounting surface used as the thermal reference.
7 D passive Drain terminal of the MOSFET; drain-source voltage is rated -30 V (VDSS), and the drain pins form the solder mounting surface used as the thermal reference.
8 D passive Drain terminal of the MOSFET; drain-source voltage is rated -30 V (VDSS), and the drain pins form the solder mounting surface used as the thermal reference.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Drain Current - Continuous ID -7.9 A Note 1a 1
Drain Current - Pulsed ID -25 A Pulsed 1
Power Dissipation for Single Operation PD 2.5 W Note 1a 1
Power Dissipation for Single Operation PD 1.2 W Note 1b 1
Power Dissipation for Single Operation PD 1 W Note 1c 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250µA 3
Gate-Body Leakage, Forward IGSSF 100 nA VGS=20V, VDS=0V 3
Gate-Body Leakage, Reverse IGSSR -100 nA VGS=-20V, VDS=0V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-24V, VGS=0V 3
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250µA 3
Static Drain-Source On-Resistance RDS(ON) 23 mΩ VGS=-10V, ID=-7.9A 3
Static Drain-Source On-Resistance RDS(ON) 35 mΩ VGS=-4.5V, ID=-6.5A 3
On-State Drain Current ID(ON) -25 A VGS=-10V, VDS=-5V 3
On-State Drain Current ID(ON) -10 A VGS=-4.5V, VDS=-5V 3
Maximum Continuous Drain-Source Diode Forward Current IS -2.1 A 3
Drain-Source Diode Forward Voltage VSD -0.74 -1.2 V VGS=0V, IS=-2.1A (Note 2) 3
Thermal Resistance, Junction-to-Ambient RθJA 50 °C/W Note 1a 2
Thermal Resistance, Junction-to-Case RθJC 25 °C/W Note 1 2

CAD (KiCad official)

  • Symbol: NDS8435A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nds8435a-etched.step / nds8435a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds8435a.step / nds8435a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 c8aeff074ab9aaf1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF