# NDS0605-NL-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

NDS0605-NL-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V (VGS). |
| 2 | S | passive | Source terminal; the reference for the gate-source (VGS) and drain-source (VDS) ratings, with VDS rated at -60 V. |
| 3 | D | passive | Drain terminal; rated for a drain-source voltage of -60 V and a continuous drain current of -500 mA at TA = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -500 | mA | TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -350 | mA | TA = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -1500 | mA |  | 1 |
| Power Dissipation | PD |  |  | 460 | mW | TA = 25 °C | 1 |
| Power Dissipation | PD |  |  | 240 | mW | TA = 100 °C | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 350 | °C/W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | VDS | -60 |  |  | V | VGS = 0 V, ID = -10 µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -1 |  | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -10 |  | 10 | µA | VDS = 0 V, VGS = ±20 V | 2 |
| Gate-Body Leakage | IGSS | -200 |  | 200 | nA | VDS = 0 V, VGS = ±10 V | 2 |
| Gate-Body Leakage | IGSS | -500 |  | 500 | nA | VDS = 0 V, VGS = ±10 V, TJ = 85 °C | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -25 |  | VDS = -60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -250 |  | VDS = -60 V, VGS = 0 V, TJ = 85 °C | 2 |
| On-State Drain Current | ID(on) | -50 |  |  | mA | VGS = -10 V, VDS = -4.5 V | 2 |
| On-State Drain Current | ID(on) | -600 |  |  | mA | VGS = -10 V, VDS = -10 V | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 4 | Ω | VGS = -4.5 V, ID = -25 mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 3 | Ω | VGS = -10 V, ID = -100 mA | 2 |
| Drain-Source On-Resistance | RDS(on) |  |  | 9 | Ω | VGS = -10 V, ID = -100 mA, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 80 |  |  | mS | VDS = -10 V, ID = -100 mA | 2 |
| Diode Forward Voltage | VSD |  |  | -1.4 | V | IS = -100 mA, VGS = 0 V | 2 |

## CAD (KiCad official)

- Symbol: `NDS0605-NL-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `nds0605-nl-vb-etched.step` / `nds0605-nl-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nds0605-nl-vb.step` / `nds0605-nl-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603043856648847360) (7 pp, sha256 `5f20afdd427c68dd`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nds0605-nl-vb-datasheet.pdf)