component
NDD04N50ZT4G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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NDD04N50ZT4G-VB
VBsemi Elec · MOSFETs · TO-252
NDD04N50ZT4G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage rated ±30 V max with threshold VGS(th) of 2.5 to 5.0 V. |
| 2 | D | passive | Drain terminal (also the TO-252 tab); drain-source voltage rated 650 V max. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 4.2 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | TC = 25 °C | 1 | ||
| Linear Derating Factor | 0.48 | W/°C | TC = 25 °C | 1 | |||
| Single Pulse Avalanche Energy | EAS | 325 | mJ | TC = 25 °C | 1 | ||
| Repetitive Avalanche Current | IAR | 4 | A | TC = 25 °C | 1 | ||
| Repetitive Avalanche Energy | EAR | 6 | mJ | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 2.8 | V/ns | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Junction-to-Ambient Thermal Resistance | RthJA | -65 | °C/W | 2 | |||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | -2.1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 670 | mV/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 3.9 | S | VDS = 50 V, ID = 3.1 A | 2 | ||
| Input Capacitance | Ciss | 1417 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 177 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 7 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Total Gate Charge | Qg | 48 | nC | ID = 3.2 A, VDS = 400 V, VGS = 10 V | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | ID = 3.2 A, VDS = 400 V, VGS = 10 V | 2 | ||
| Gate-Drain Charge | Qgd | 19 | nC | ID = 3.2 A, VDS = 400 V, VGS = 10 V | 2 | ||
| Continuous Source-Drain Diode Current | IS | 4 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 21 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 3.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 493 | 739 | ns | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2.1 | 3.2 | µC | TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs | 2 | |
| Rise Time | tr | 20 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 34 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 | ||
| Fall Time | tf | 18 | ns | VDD = 325 V, ID = 3.2 A, RG = 9.1 Ω, RD = 62 Ω | 2 |
CAD (KiCad official)
- Symbol:
NDD04N50ZT4G-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ndd04n50zt4g-vb-etched.step/ndd04n50zt4g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ndd04n50zt4g-vb.step/ndd04n50zt4g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
8843c629bba4fa3d, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).