component
NCV887001D1R2G
Public Made by Adomby adom
onsemi DC-DC Converters, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCV887001D1R2G
onsemi · DC-DC Converters · SOIC-8
NCV887001D1R2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EN/SYNC | input | Enable and synchronization input whose falling edge synchronizes the internal oscillator, and the part enters sleep mode when this pin is held low longer than the enable time-out period. |
| 2 | ISNS | input | Current sense input, connected to the source of the external N-MOSFET through a current-sense resistor to ground, used for switching-current regulation and current limiting. |
| 3 | GND | power_in | Ground reference for the device. |
| 4 | GDRV | output | Gate driver output that connects to the gate of the external N-MOSFET, with an optional series resistance to tailor EMC performance. |
| 5 | VDRV | power_out | Internally regulated driving-voltage supply for the external N-MOSFET, sourced from VIN, to be bypassed with a 1.0 F ceramic capacitor to ground (as printed in the datasheet). |
| 6 | VIN | power_in | Input voltage pin for the device, rated 3.2 V to 40 V operating with 45 V load dump, and absolute maximum DC supply of -0.3 V to 40 V; a diode from the input supply to VIN is needed for bootstrapping. |
| 7 | VC | output | Output of the voltage error amplifier, with an external compensator network from VC to GND used to stabilize the converter; absolute maximum DC voltage is -0.3 V to 3.6 V. |
| 8 | VFB | input | Output voltage feedback input, where a resistor divider from the output to VFB and VFB to GND sets the regulated output voltage; absolute maximum DC voltage is -0.3 V to 3.6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Supply Voltage (VIN) | -0.3 | 40 | V | 2 | |||
| Peak Transient Voltage (Load Dump on VIN) | 45 | V | Load Dump on VIN | 2 | |||
| DC Supply Voltage (VDRV, GDRV) | 12 | V | 2 | ||||
| Peak Transient Voltage (VFB) | -0.3 | 6 | V | 2 | |||
| DC Voltage (VC, VFB, ISNS) | -0.3 | 3.6 | V | 2 | |||
| DC Voltage (EN/SYNC) | -0.3 | 6 | V | 2 | |||
| DC Voltage Stress (VIN − VDRV) | -0.7 | 40 | V | 2 | |||
| Operating Junction Temperature | -40 | 150 | °C | 2 | |||
| Storage Temperature Range | -65 | 150 | °C | 2 | |||
| Peak Reflow Soldering Temperature | 265 | °C | Pb-Free, 60 to 150 seconds at 217°C | 2 | |||
| Quiescent Current, Sleep Mode (−40°C<TJ<125°C) | Iq,sleep | 2 | 6 | A | VIN = 13.2 V, EN = 0, −40°C < TJ < 125°C | 3 | |
| Quiescent Current, No switching | Iq,off | 1.5 | 2.5 | mA | Into VIN pin, EN = 1, No Switching | 3 | |
| Quiescent Current, Switching, Normal Operation | Iq,on | 3 | 6 | mA | Into VIN pin, EN = 1, Switching | 3 | |
| Minimum Pulse Width | ton,min | 200 | 250 | 300 | ns | 3 | |
| Maximum Duty Cycle | Dmax | 91 | 93 | 95 | % | NCV887001 | 3 |
| Switching Frequency | fs | 90 | 100 | 110 | kHz | NCV887001 | 3 |
| Soft-Start Time | tss | 10.5 | 13 | 15.5 | ms | From start of switching with VFB = 0 until reference voltage = VREF; NCV887001 | 3 |
| Soft-Start Delay | tss,dly | 720 | 840 | s | From EN → 1 until start of switching with VFB = 0 | 3 | |
| Slope Compensating Ramp | Sa | 28 | 33 | 38 | mV/s | NCV887001 | 3 |
| EN/SYNC Pull-down Current | IEN/SYNC | 5 | 10 | A | VEN/SYNC = 5 V | 4 | |
| EN/SYNC Input High Voltage | Vs,ih | 2 | 5 | V | VIN > VUVLO | 4 | |
| EN/SYNC Input Low Voltage | Vs,il | 0 | 800 | mV | 4 | ||
| EN/SYNC Time-out Ratio | %ten | 350 | % | From SYNC falling edge, to oscillator control (EN high) or shutdown (EN low), Percent of typical switching period | 4 | ||
| SYNC Minimum Frequency Ratio | %fsync,min | 80 | % | Percent of fs | 4 | ||
| SYNC Maximum Frequency | fsync,max | 1.1 | MHz | 4 | |||
| Synchronization Delay | ts,dly | 50 | 100 | ns | From SYNC falling edge to GDRV falling edge under open loop conditions | 4 | |
| Synchronization Duty Cycle | Dsync | 25 | 75 | % | 4 | ||
| Low-frequency Gain | Acsa | 0.9 | 1 | 1.1 | V/V | Input-to-output gain at dc, ISNS ≤ 1 V | 4 |
| Bandwidth | BWcsa | 2.5 | MHz | Gain of Acsa −3 dB | 4 | ||
| ISNS Input Bias Current | Isns,bias | 30 | 50 | A | Out of ISNS pin | 4 | |
| Current Limit Threshold Voltage | Vcl | 360 | 400 | 440 | mV | Voltage on ISNS pin; NCV887001 | 4 |
| Current Limit, Response Time | tcl | 80 | 125 | ns | CL tripped until GDRV falling edge, VISNS = Vcl(typ) + 60 mV | 4 | |
| Overcurrent Protection, Threshold Voltage | %Vocp | 125 | 150 | 175 | % | Percent of Vcl | 4 |
| Overcurrent Protection, Response Time | tocp | 80 | 125 | ns | From overcurrent event, Until switching stops, VISNS = VOCP + 40 mV | 4 | |
| Transconductance | gm,vea | 0.8 | 1.2 | 1.63 | mS | VFB, Vref = ±20 mV | 4 |
| VEA Output Resistance | Ro,vea | 2 | M | 4 | |||
| VFB Input Bias Current | Ivfb,bias | 0.5 | 2 | A | Current out of VFB pin | 4 | |
| Reference Voltage | Vref | 1.176 | 1.2 | 1.224 | V | 4 | |
| VEA Maximum Output Voltage | Vc,max | 2.5 | V | 4 | |||
| VEA Minimum Output Voltage | Vc,min | 0.3 | V | 4 | |||
| VEA Sourcing Current | Isrc,vea | 80 | 100 | A | VEA output current, Vc = 2.0 V | 4 | |
| VEA Sinking Current | Isnk,vea | 80 | 100 | A | VEA output current, Vc = 0.7 V | 4 | |
| Gate Driver Sourcing Current | Isrc | 600 | 800 | mA | VDRV ≥ 6 V, VDRV − VGDRV = 2 V; NCV887001 | 4 | |
| Gate Driver Sinking Current | Isink | 500 | 600 | mA | VGDRV ≥ 2 V; NCV887001 | 4 | |
| Driving Voltage Dropout | Vdrv,do | 0.2 | 0.35 | V | VIN − VDRV, IVDRV = 10 mA | 4 | |
| Driving Voltage Source Current | Idrv | 10 | 15 | mA | VIN − VDRV = 1 V | 4 | |
| Backdrive Diode Voltage Drop | Vd,bd | 0.7 | V | VDRV − VIN, Id,bd = 5 mA | 4 | ||
| Driving Voltage | VDRV | 10 | 10.5 | 11 | V | IVDRV = 0.1 − 25 mA; NCV887001 | 4 |
| Undervoltage Lock-out Threshold Voltage | Vuvlo | 3 | 3.1 | 3.2 | V | VIN falling | 5 |
| Undervoltage Lock-out Hysteresis | Vuvlo,hys | 50 | 125 | 200 | mV | VIN rising | 5 |
| Startup Blanking Period | %tscp,dly | 100 | 120 | 150 | % | From start of soft-start, Percent of tss | 5 |
| Hiccup-mode Period | %thcp,dly | 65 | 80 | 95 | % | From shutdown to start of soft-start, Percent of tss | 5 |
| Short Circuit Threshold Voltage | %Vscp | 60 | 67 | 75 | % | VFB as percent of Vref | 5 |
| Short Circuit Delay | tscp | 35 | 100 | ns | From VFB < Vscp to stop switching | 5 | |
| Thermal Shutdown Threshold | Tsd | 160 | 170 | 180 | °C | TJ rising | 5 |
| Thermal Shutdown Hysteresis | Tsd,hys | 10 | 15 | 20 | °C | TJ falling | 5 |
| Thermal Shutdown Delay | tsd,dly | 100 | ns | From TJ > Tsd to stop switching | 5 | ||
| Package Thermal Resistance Junction-to-Ambient | RθJA | 100 | °C/W | 1 in2, 1 oz copper area used for heatsinking | 3 |
CAD (KiCad official)
- Symbol:
NCV887001D1R2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ncv887001d1r2g-etched.step/ncv887001d1r2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncv887001d1r2g.step/ncv887001d1r2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (17 pp, sha256
1f3c3c6e3bb0722b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCV887001D1R2G
**onsemi** · DC-DC Converters · SOIC-8
NCV887001D1R2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EN/SYNC | input | Enable and synchronization input whose falling edge synchronizes the internal oscillator, and the part enters sleep mode when this pin is held low longer than the enable time-out period. |
| 2 | ISNS | input | Current sense input, connected to the source of the external N-MOSFET through a current-sense resistor to ground, used for switching-current regulation and current limiting. |
| 3 | GND | power_in | Ground reference for the device. |
| 4 | GDRV | output | Gate driver output that connects to the gate of the external N-MOSFET, with an optional series resistance to tailor EMC performance. |
| 5 | VDRV | power_out | Internally regulated driving-voltage supply for the external N-MOSFET, sourced from VIN, to be bypassed with a 1.0 F ceramic capacitor to ground (as printed in the datasheet). |
| 6 | VIN | power_in | Input voltage pin for the device, rated 3.2 V to 40 V operating with 45 V load dump, and absolute maximum DC supply of -0.3 V to 40 V; a diode from the input supply to VIN is needed for bootstrapping. |
| 7 | VC | output | Output of the voltage error amplifier, with an external compensator network from VC to GND used to stabilize the converter; absolute maximum DC voltage is -0.3 V to 3.6 V. |
| 8 | VFB | input | Output voltage feedback input, where a resistor divider from the output to VFB and VFB to GND sets the regulated output voltage; absolute maximum DC voltage is -0.3 V to 3.6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Supply Voltage (VIN) | | -0.3 | | 40 | V | | 2 |
| Peak Transient Voltage (Load Dump on VIN) | | | | 45 | V | Load Dump on VIN | 2 |
| DC Supply Voltage (VDRV, GDRV) | | | | 12 | V | | 2 |
| Peak Transient Voltage (VFB) | | -0.3 | | 6 | V | | 2 |
| DC Voltage (VC, VFB, ISNS) | | -0.3 | | 3.6 | V | | 2 |
| DC Voltage (EN/SYNC) | | -0.3 | | 6 | V | | 2 |
| DC Voltage Stress (VIN − VDRV) | | -0.7 | | 40 | V | | 2 |
| Operating Junction Temperature | | -40 | | 150 | °C | | 2 |
| Storage Temperature Range | | -65 | | 150 | °C | | 2 |
| Peak Reflow Soldering Temperature | | | | 265 | °C | Pb-Free, 60 to 150 seconds at 217°C | 2 |
| Quiescent Current, Sleep Mode (−40°C<TJ<125°C) | Iq,sleep | | 2 | 6 | A | VIN = 13.2 V, EN = 0, −40°C < TJ < 125°C | 3 |
| Quiescent Current, No switching | Iq,off | | 1.5 | 2.5 | mA | Into VIN pin, EN = 1, No Switching | 3 |
| Quiescent Current, Switching, Normal Operation | Iq,on | | 3 | 6 | mA | Into VIN pin, EN = 1, Switching | 3 |
| Minimum Pulse Width | ton,min | 200 | 250 | 300 | ns | | 3 |
| Maximum Duty Cycle | Dmax | 91 | 93 | 95 | % | NCV887001 | 3 |
| Switching Frequency | fs | 90 | 100 | 110 | kHz | NCV887001 | 3 |
| Soft-Start Time | tss | 10.5 | 13 | 15.5 | ms | From start of switching with VFB = 0 until reference voltage = VREF; NCV887001 | 3 |
| Soft-Start Delay | tss,dly | | 720 | 840 | s | From EN → 1 until start of switching with VFB = 0 | 3 |
| Slope Compensating Ramp | Sa | 28 | 33 | 38 | mV/s | NCV887001 | 3 |
| EN/SYNC Pull-down Current | IEN/SYNC | | 5 | 10 | A | VEN/SYNC = 5 V | 4 |
| EN/SYNC Input High Voltage | Vs,ih | 2 | | 5 | V | VIN > VUVLO | 4 |
| EN/SYNC Input Low Voltage | Vs,il | 0 | | 800 | mV | | 4 |
| EN/SYNC Time-out Ratio | %ten | | | 350 | % | From SYNC falling edge, to oscillator control (EN high) or shutdown (EN low), Percent of typical switching period | 4 |
| SYNC Minimum Frequency Ratio | %fsync,min | | | 80 | % | Percent of fs | 4 |
| SYNC Maximum Frequency | fsync,max | 1.1 | | | MHz | | 4 |
| Synchronization Delay | ts,dly | | 50 | 100 | ns | From SYNC falling edge to GDRV falling edge under open loop conditions | 4 |
| Synchronization Duty Cycle | Dsync | 25 | | 75 | % | | 4 |
| Low-frequency Gain | Acsa | 0.9 | 1 | 1.1 | V/V | Input-to-output gain at dc, ISNS ≤ 1 V | 4 |
| Bandwidth | BWcsa | 2.5 | | | MHz | Gain of Acsa −3 dB | 4 |
| ISNS Input Bias Current | Isns,bias | | 30 | 50 | A | Out of ISNS pin | 4 |
| Current Limit Threshold Voltage | Vcl | 360 | 400 | 440 | mV | Voltage on ISNS pin; NCV887001 | 4 |
| Current Limit, Response Time | tcl | | 80 | 125 | ns | CL tripped until GDRV falling edge, VISNS = Vcl(typ) + 60 mV | 4 |
| Overcurrent Protection, Threshold Voltage | %Vocp | 125 | 150 | 175 | % | Percent of Vcl | 4 |
| Overcurrent Protection, Response Time | tocp | | 80 | 125 | ns | From overcurrent event, Until switching stops, VISNS = VOCP + 40 mV | 4 |
| Transconductance | gm,vea | 0.8 | 1.2 | 1.63 | mS | VFB, Vref = ±20 mV | 4 |
| VEA Output Resistance | Ro,vea | 2 | | | M | | 4 |
| VFB Input Bias Current | Ivfb,bias | | 0.5 | 2 | A | Current out of VFB pin | 4 |
| Reference Voltage | Vref | 1.176 | 1.2 | 1.224 | V | | 4 |
| VEA Maximum Output Voltage | Vc,max | 2.5 | | | V | | 4 |
| VEA Minimum Output Voltage | Vc,min | | | 0.3 | V | | 4 |
| VEA Sourcing Current | Isrc,vea | 80 | 100 | | A | VEA output current, Vc = 2.0 V | 4 |
| VEA Sinking Current | Isnk,vea | 80 | 100 | | A | VEA output current, Vc = 0.7 V | 4 |
| Gate Driver Sourcing Current | Isrc | 600 | 800 | | mA | VDRV ≥ 6 V, VDRV − VGDRV = 2 V; NCV887001 | 4 |
| Gate Driver Sinking Current | Isink | 500 | 600 | | mA | VGDRV ≥ 2 V; NCV887001 | 4 |
| Driving Voltage Dropout | Vdrv,do | | 0.2 | 0.35 | V | VIN − VDRV, IVDRV = 10 mA | 4 |
| Driving Voltage Source Current | Idrv | 10 | 15 | | mA | VIN − VDRV = 1 V | 4 |
| Backdrive Diode Voltage Drop | Vd,bd | | | 0.7 | V | VDRV − VIN, Id,bd = 5 mA | 4 |
| Driving Voltage | VDRV | 10 | 10.5 | 11 | V | IVDRV = 0.1 − 25 mA; NCV887001 | 4 |
| Undervoltage Lock-out Threshold Voltage | Vuvlo | 3 | 3.1 | 3.2 | V | VIN falling | 5 |
| Undervoltage Lock-out Hysteresis | Vuvlo,hys | 50 | 125 | 200 | mV | VIN rising | 5 |
| Startup Blanking Period | %tscp,dly | 100 | 120 | 150 | % | From start of soft-start, Percent of tss | 5 |
| Hiccup-mode Period | %thcp,dly | 65 | 80 | 95 | % | From shutdown to start of soft-start, Percent of tss | 5 |
| Short Circuit Threshold Voltage | %Vscp | 60 | 67 | 75 | % | VFB as percent of Vref | 5 |
| Short Circuit Delay | tscp | | 35 | 100 | ns | From VFB < Vscp to stop switching | 5 |
| Thermal Shutdown Threshold | Tsd | 160 | 170 | 180 | °C | TJ rising | 5 |
| Thermal Shutdown Hysteresis | Tsd,hys | 10 | 15 | 20 | °C | TJ falling | 5 |
| Thermal Shutdown Delay | tsd,dly | | | 100 | ns | From TJ > Tsd to stop switching | 5 |
| Package Thermal Resistance Junction-to-Ambient | RθJA | | 100 | | °C/W | 1 in2, 1 oz copper area used for heatsinking | 3 |
## CAD (KiCad official)
- Symbol: `NCV887001D1R2G`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ncv887001d1r2g-etched.step` / `ncv887001d1r2g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncv887001d1r2g.step` / `ncv887001d1r2g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590161646359511040) (17 pp, sha256 `1f3c3c6e3bb0722b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncv887001d1r2g-datasheet.pdf)