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NCV8403A-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCV8403A-HXY

HXY MOSFET · MOSFETs · TO-252-2L

NCV8403A-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, which the datasheet rates for VGS of ±20V absolute maximum and specifies RDS(on) at gate drive as low as 4.5V.
2 D passive Drain, rated for VDS of 40V and continuous drain current ID of 20A at TC=25℃.
3 S passive Source, the reference terminal for VGS, with maximum continuous body diode forward current of 5A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 20 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 10 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 30 A 1
Single Pulse Avalanche Energy EAS 13.1 mJ 1
Avalanche Current IAS 5 A 1
Total Power Dissipation PD 4 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 68 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS =40V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.2 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 25 32 mΩ VGS=10V, ID=4A 2
Static Drain-Source on-Resistance RDS(on) 40 60 mΩ VGS=4.5V, ID=3A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 20 A 2
Input Capacitance Ciss 435 pF VDS=20V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 58 pF 2
Reverse Transfer Capacitance Crss 35 pF 2
Total Gate Charge Qg 11 nC VDS=20V, ID=3A, VGS=10V 2
Gate-Source Charge Qgs 2 nC 2
Gate-Drain (Miller) Charge Qgd 2.5 nC 2
Turn-on Delay Time td(on) 10 ns VDD=20V, ID=4A, RL=1Ω, RGEN=3Ω, VGS=10V 2
Turn-on Rise Time tr 8 ns 2
Turn-off Delay Time td(off) 29 ns 2
Turn-off Fall Time tf 12 ns 2
Body Diode Reverse Recovery Time trr 20 ns TJ=25℃, IF=5A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 11 nC 2

CAD (KiCad official)

  • Symbol: NCV8403A-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ncv8403a-hxy-etched.step / ncv8403a-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncv8403a-hxy.step / ncv8403a-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 ab0ccceb526461b0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF