# NCV57080CDR2G

**onsemi** · Gate Drive ICs · SOIC-8

NCV57080CDR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD1 | power_in | Input side power supply that requires a good quality bypass capacitor to GND1 placed close to the pin, and the UVLO circuit enables operation at power-on when a typical supply voltage higher than VUVLO1-OUT-ON is present. |
| 2 | IN+ | input | Non-inverted gate driver input, internally clamped to GND1 with an equivalent 125 k pull-down resistor to keep the output low without an input signal, and a minimum positive or negative pulse width is required before the outputs respond. |
| 3 | IN- | input | Inverted gate driver input, internally clamped to VDD1 with an equivalent 125 k pull-up resistor to keep the output low without an input signal, and a minimum positive or negative pulse width is required before the outputs respond. |
| 4 | GND1 | power_in | Input side ground reference. |
| 5 | VDD2 | power_in | Output side positive power supply with an operating range from UVLO2 to its maximum allowed value, requiring a good quality bypass capacitor to GND2 placed close to the pin. |
| 6 | OUTH | output | Driver high output that provides the appropriate drive voltage and source current to the IGBT/MOSFET gate. |
| 7 | OUTL | output | Driver low output that provides the appropriate drive voltage and sink current to the IGBT/MOSFET gate, and is actively pulled low during start-up. |
| 8 | GND2 | power_in | Output side gate drive reference connecting to the IGBT emitter or MOSFET source. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Power Management ICs |
| Pins | 8 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | ABS |  | RIO Insulation Resistance at TS, VIO = 500 V 109 Table 3. ABSOLUTE MAXIMUM RATINGS (Note 1) | 6 |

## CAD (KiCad official)

- Symbol: `NCV57080CDR2G`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ncv57080cdr2g-etched.step` / `ncv57080cdr2g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncv57080cdr2g.step` / `ncv57080cdr2g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/ncv57080c-d.pdf) (24 pp, sha256 `a01719ad55ec6781`, retrieved 2026-11-02, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ncv57080cdr2g-datasheet.pdf)