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Contents

README

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NCP81151MNTBG

onsemi · Gate Drivers · DFN-8-EP(2x2)

NCP81151MNTBG from onsemi, in a DFN-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BST power_in Floating bootstrap supply pin for the high-side gate driver, with the bootstrap capacitor connected between this pin and SW.
2 PWM input Three-state PWM control input: Low enables the low-side FET, Mid enables diode emulation, and High enables the high-side FET.
3 EN input Three-state enable input: High enables the gate driver, Low disables it, and Mid forces diode mode with both DRVH and DRVL low.
4 VCC power_in Main supply input with a 4.5 V to 5.5 V operating range, bypassed to ground with a capacitor connected from this pin.
5 DRVL output Low-side gate drive output that connects to the gate of the low-side MOSFET.
6 GND power_in Bias and reference ground to which all signals are referenced, to be connected to a local ground plane.
7 SW passive Switch node that connects to the source of the high-side MOSFET and the drain of the low-side MOSFET, and serves as the bootstrap supply return.
8 DRVH output High-side gate drive output that connects to the gate of the high-side MOSFET.
9 FLAG passive Thermal flag (exposed pad) with no electrical connection to the IC, to be connected to the ground plane for heat dissipation.

Key specifications

Parameter Value
Manufacturer onsemi
Package DFN-8-EP(2x2)
Category Motor Driver ICs
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Main Supply Voltage Input VCC -0.3 6.5 V 4
Bootstrap Supply Voltage BST 35 V wrt GND 4
Bootstrap Supply Voltage BST 40 V 50 ns wrt GND 4
Bootstrap Supply Voltage BST 6.5 V wrt SW 4
Bootstrap Supply Voltage BST 7.7 V < 50 ns wrt SW 4
Bootstrap Supply Voltage BST -0.3 V wrt SW 4
Switching Node (Bootstrap Supply Return) SW 35 V 4
Switching Node (Bootstrap Supply Return) SW 40 V 50 ns 4
Switching Node (Bootstrap Supply Return) SW -5 V 4
Switching Node (Bootstrap Supply Return) SW -10 V 200 ns 4
High Side Driver Output DRVH -0.3 V wrt SW 4
High Side Driver Output DRVH -2 V < 200 ns wrt SW 4
Low Side Driver Output DRVL -0.3 V DC 4
Low Side Driver Output DRVL -5 V < 200 ns 4
DRVH and DRVL Control Input PWM -0.3 6.5 V 4
Enable Pin EN -0.3 6.5 V 4
Ground GND 0 0 V 4
Operating Junction Temperature Range TJ -40 150 °C Note 2 4
Operating Ambient Temperature Range TA -40 100 °C 4
Maximum Storage Temperature Range TSTG -55 150 °C 4
VCC Operation Voltage 4.5 5.5 V 5
VCC Start Threshold 3.8 4.35 4.5 V 5
VCC UVLO Hysteresis 150 200 250 mV 5
Shutdown Mode 11 20 A ICC + IBST, EN = GND 5
PWM Mid-State 1.3 2.7 V 5
Bootstrap Diode Forward Voltage 0.1 0.4 0.6 V VCC = 5 V, forward bias current = 2 mA 5
Output Impedance, Sourcing Current (High Side) 0.9 1.7 VBST−VSW = 5 V 5
Output Impedance, Sinking Current (High Side) 0.7 1.7 VBST−VSW = 5 V 5
DRVH Rise Time trDRVH 16 25 ns VCC = 5 V, 3 nF load, VBST−VSW = 5 V 5
DRVH Fall Time tfDRVH 11 18 ns VCC = 5 V, 3 nF load, VBST−VSW = 5 V 5
DRVH Turn−Off Propagation Delay tpdlDRVH 10 30 ns CLOAD = 3 nF 5
DRVH Turn−On Propagation Delay tpdhDRVH 10 40 ns CLOAD = 3 nF 5
Output Impedance, Sourcing Current (Low Side) 0.9 1.7 5
Output Impedance, Sinking Current (Low Side) 0.4 0.8 5
DRVL Rise Time trDRVL 16 25 ns CLOAD = 3 nF 5
DRVL Fall Time tfDRVL 11 15 ns CLOAD = 3 nF 5
DRVL Turn−Off Propagation Delay tpdlDRVL 10 30 ns CLOAD = 3 nF 5
DRVL Turn−On Propagation Delay tpdhDRVL 5 25 ns CLOAD = 3 nF 5
EN Input Voltage Mid 1.35 1.8 V 6
Input bias current -1 1 A 6
Propagation Delay Time 20 40 ns 6
Normal Mode 4.7 mA ICC + IBST, EN = 5 V, PWM = OSC 5
Standby Current (PWM Low) 0.9 mA ICC + IBST, EN = HIGH, PWM = LOW, No loading on DRVH & DRVL 5
Standby Current (PWM High) 1.1 mA ICC + IBST, EN = HIGH, PWM = HIGH, No loading on DRVH & DRVL 5
PWM Input High 3.4 V 5
PWM Input Low 0.7 V 5
ZCD Blanking Timer 350 ns 5
SW Pulldown Resistance 45 k SW to PGND 5
DRVH Pulldown Resistance 45 k DRVH to SW, BST−SW = 0 V 5
DRVL Pulldown Resistance 45 k DRVL to PGND, VCC = PGND 5
EN Input Voltage High 3.3 V 6
EN Input Voltage Low 0.6 V 6
SW Node Leakage Current 20 A 6
Zero Cross Detection Threshold Voltage -6 mV 6
Thermal Characteristic, QFN Package RJA 119 °C/W Note 1: 1 in2 Cu, 1 oz. thickness 4

CAD (KiCad official)

  • Symbol: NCP81151MNTBG
  • Footprint: Package_DFN_QFN:DFN-8-1EP_2x2mm_P0.5mm_EP0.6x1.2mm
  • 3D model: DFN-8-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: ncp81151mntbg-etched.step / ncp81151mntbg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncp81151mntbg.step / ncp81151mntbg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 0203805c369893c5, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF