component
NCP51400MNTXG
Public Made by Adomby adom
onsemi Linear Voltage Regulators (LDO), UDFN-10-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCP51400MNTXG
onsemi · Linear Voltage Regulators (LDO) · UDFN-10-EP(3x3)
NCP51400MNTXG from onsemi, in a UDFN-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VRI | input | VTT external reference input, set to VDDQ/2 through a resistor network, with a voltage range of 0.5 V to 1.8 V. |
| 2 | PVCC | power_in | Power input internally connected to the output source MOSFET, with a recommended range of -0.1 V to 3.5 V. |
| 3 | VTT | power_out | Power output of the linear regulator, regulated to VRO and able to source and sink current. |
| 4 | PGND | power_in | Power ground internally connected to the output sink MOSFET. |
| 5 | VTTS | input | VTT sense input providing accurate remote feedback sensing of VTT; connect to the remote DDR termination bypass capacitors. |
| 6 | VRO | output | Independent buffered VTT reference output that sources and sinks over 5 mA; connect to GND through a 0.1 uF ceramic capacitor. |
| 7 | EN | input | CMOS-compatible shutdown control input with logic high = enable and logic low = shutdown; connect to VDDQ for normal operation. |
| 8 | GND | power_in | Common ground. |
| 9 | PGOOD | output | Open-drain power good output that goes high when VTT is within ±20% of VRO and needs a pull-up resistor. |
| 10 | VCC | power_in | Analog power supply input with a range of 2.375 V to 5.5 V; connect to GND through a 1-4.7 uF ceramic capacitor. |
| 11 | THERMAL PAD | passive | Exposed pad for thermal connection; must be connected to the ground plane using multiple vias for maximum power dissipation performance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | UDFN-10-EP(3x3) |
| Category | Power Supply Chip |
| Pins | 11 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC Supply Current | IVCC | 0.7 | 1 | mA | TA = +25°C, EN = 3.3 V, No Load | 3 | |
| VCC Shutdown Current | IVCC SHD | 65 | 80 | µA | TA = +25°C, EN = 0 V, VRI = 0 V, No Load | 3 | |
| VCC Shutdown Current | IVCC SHD | 200 | 400 | µA | TA = +25°C, EN = 0 V, VRI > 0.4 V, No Load | 3 | |
| VCC UVLO Threshold | VUVLO | 2.15 | 2.3 | 2.375 | V | Wake-up, TA = +25°C | 3 |
| PVCC Supply Current | IPVCC | 1 | 50 | µA | TA = +25°C, EN = 3.3 V, No Load | 3 | |
| PVCC Shutdown Current | IPVCC SHD | 0.1 | 50 | µA | TA = +25°C, EN = 0 V, No Load | 3 | |
| VTT Output Voltage Tolerance to VRO | -18 | 18 | mV | PVCC = 1.50 V, VRO = 0.75 V, -2 A < ITT < 2 A | 3 | ||
| VTT Output Voltage Tolerance to VRO | -20 | 20 | mV | PVCC = 1.35 V, VRO = 0.675 V, -2 A < ITT < 2 A | 3 | ||
| Source Current Limit | 3 | 4.5 | A | VTTS = 90% * VRO | 3 | ||
| Sink Current Limit | 3.5 | 5.5 | A | VTTS = 110% * VRO | 3 | ||
| Discharge MOSFET On-resistance | RDIS | 18 | 25 | Ω | VRI = 0 V, VTT = 0.3 V, EN = 0 V, TA = +25°C | 3 | |
| VRI Voltage Range | VRI | 0.5 | 1.8 | V | 3 | ||
| VRI UVLO Voltage | VRI UVLO | 360 | 390 | 435 | mV | VRI rising | 3 |
| VRO Voltage Tolerance to VRI | -15 | 15 | mV | -10 mA < IRO < 10 mA, VRI = 1.25 V | 4 | ||
| VRO Source Current Limit | 10 | 40 | mA | VRO = 0 V | 4 | ||
| VRO Sink Current Limit | 10 | 40 | mA | VRO = 0 V | 4 | ||
| PGOOD Lower Threshold (with respect to VRO) | -23.5 | -20 | -17.5 | % | 4 | ||
| PGOOD Upper Threshold (with respect to VRO) | 17.5 | 20 | 23.5 | % | 4 | ||
| PGOOD Leakage Current | 1 | µA | VTTS = VRI (PGOOD = True), PGOOD = VCC + 0.2 V | 4 | |||
| PGOOD Output Low Voltage | 0.4 | V | IGOOD = 4 mA | 4 | |||
| EN Logic high threshold | VIH | 1.7 | V | EN Logic high | 4 | ||
| EN Logic low threshold | VIL | 0.3 | V | EN Logic low | 4 | ||
| EN Logic Leakage Current | IILEAK | -1 | 1 | µA | EN pin, TA = +25°C | 4 | |
| Thermal Shutdown Temperature | TSD | 150 | °C | 4 | |||
| Thermal Shutdown Hysteresis | TSH | 25 | °C | 4 | |||
| VTT Output DC Voltage | VOS | 0.75 | V | PVCC = 1.50 V, VRO = 0.75 V, ITT = 0 A | 3 | ||
| Soft-start Current Limit Timeout | TSS | 200 | µs | 3 | |||
| PGOOD Start-up Delay | 2 | ms | Start-up rising edge, VTTS within 15% of VRO | 4 | |||
| PGOOD = False Delay | 10 | µs | VTTS is beyond ±20% PGOOD trip thresholds | 4 | |||
| Supply Voltage | VCC | 2.375 | 5.5 | V | 3 | ||
| Voltage Range VRO | VRO | -0.1 | 1.8 | V | 3 | ||
| Voltage Range VRI | VRI | 0.5 | 1.8 | V | 3 | ||
| Voltage Range PVCC, VTT, VTTS, EN, PGOOD | -0.1 | 3.5 | V | 3 | |||
| Voltage Range PGND | -0.1 | 0.1 | V | 3 | |||
| Operating Free-Air Temperature | TA | -40 | 125 | °C | 3 | ||
| VCC, PVCC, VTT, VTTS, VRI, VRO voltage | -0.3 | 6 | V | 2 | |||
| EN, PGOOD voltage | -0.3 | 6 | V | 2 | |||
| PGND to GND | -0.3 | 0.3 | V | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| ESD Capability, Human Body Model | ESDHBM | 2000 | V | 2 | |||
| Junction-to-ambient thermal resistance | RθJA | 53.9 | °C/W | 1S2P JEDEC JESD51-7 PCB with 240 sqmm, 2 oz copper heat spreader | 2 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 95.5 | °C/W | 2 | |||
| Junction-to-board thermal resistance | RθJB | 32.3 | °C/W | 1mm from package | 2 | ||
| Junction-to-top thermal characterization | ψJT | 4.3 | °C/W | 2 | |||
| Junction-to-case (bot) thermal resistance | RθJC(bot) | 14.2 | °C/W | 2 | |||
| Power Rating | 1.92 | W | TA = 25°C, 10-Pin DFN | 2 | |||
| Power Rating | 0.79 | W | TA = +85°C, 10-Pin DFN | 2 |
CAD (KiCad official)
- Symbol:
NCP51400MNTXG - Footprint:
Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm - 3D model: UDFN-10-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
ncp51400mntxg-etched.step/ncp51400mntxg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncp51400mntxg.step/ncp51400mntxg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
0e49873ffb90fac6, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCP51400MNTXG
**onsemi** · Linear Voltage Regulators (LDO) · UDFN-10-EP(3x3)
NCP51400MNTXG from onsemi, in a UDFN-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VRI | input | VTT external reference input, set to VDDQ/2 through a resistor network, with a voltage range of 0.5 V to 1.8 V. |
| 2 | PVCC | power_in | Power input internally connected to the output source MOSFET, with a recommended range of -0.1 V to 3.5 V. |
| 3 | VTT | power_out | Power output of the linear regulator, regulated to VRO and able to source and sink current. |
| 4 | PGND | power_in | Power ground internally connected to the output sink MOSFET. |
| 5 | VTTS | input | VTT sense input providing accurate remote feedback sensing of VTT; connect to the remote DDR termination bypass capacitors. |
| 6 | VRO | output | Independent buffered VTT reference output that sources and sinks over 5 mA; connect to GND through a 0.1 uF ceramic capacitor. |
| 7 | EN | input | CMOS-compatible shutdown control input with logic high = enable and logic low = shutdown; connect to VDDQ for normal operation. |
| 8 | GND | power_in | Common ground. |
| 9 | PGOOD | output | Open-drain power good output that goes high when VTT is within ±20% of VRO and needs a pull-up resistor. |
| 10 | VCC | power_in | Analog power supply input with a range of 2.375 V to 5.5 V; connect to GND through a 1-4.7 uF ceramic capacitor. |
| 11 | THERMAL PAD | passive | Exposed pad for thermal connection; must be connected to the ground plane using multiple vias for maximum power dissipation performance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | UDFN-10-EP(3x3) |
| Category | Power Supply Chip |
| Pins | 11 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC Supply Current | IVCC | | 0.7 | 1 | mA | TA = +25°C, EN = 3.3 V, No Load | 3 |
| VCC Shutdown Current | IVCC SHD | | 65 | 80 | µA | TA = +25°C, EN = 0 V, VRI = 0 V, No Load | 3 |
| VCC Shutdown Current | IVCC SHD | | 200 | 400 | µA | TA = +25°C, EN = 0 V, VRI > 0.4 V, No Load | 3 |
| VCC UVLO Threshold | VUVLO | 2.15 | 2.3 | 2.375 | V | Wake-up, TA = +25°C | 3 |
| PVCC Supply Current | IPVCC | | 1 | 50 | µA | TA = +25°C, EN = 3.3 V, No Load | 3 |
| PVCC Shutdown Current | IPVCC SHD | | 0.1 | 50 | µA | TA = +25°C, EN = 0 V, No Load | 3 |
| VTT Output Voltage Tolerance to VRO | | -18 | | 18 | mV | PVCC = 1.50 V, VRO = 0.75 V, -2 A < ITT < 2 A | 3 |
| VTT Output Voltage Tolerance to VRO | | -20 | | 20 | mV | PVCC = 1.35 V, VRO = 0.675 V, -2 A < ITT < 2 A | 3 |
| Source Current Limit | | 3 | | 4.5 | A | VTTS = 90% * VRO | 3 |
| Sink Current Limit | | 3.5 | | 5.5 | A | VTTS = 110% * VRO | 3 |
| Discharge MOSFET On-resistance | RDIS | | 18 | 25 | Ω | VRI = 0 V, VTT = 0.3 V, EN = 0 V, TA = +25°C | 3 |
| VRI Voltage Range | VRI | 0.5 | | 1.8 | V | | 3 |
| VRI UVLO Voltage | VRI UVLO | 360 | 390 | 435 | mV | VRI rising | 3 |
| VRO Voltage Tolerance to VRI | | -15 | | 15 | mV | -10 mA < IRO < 10 mA, VRI = 1.25 V | 4 |
| VRO Source Current Limit | | 10 | | 40 | mA | VRO = 0 V | 4 |
| VRO Sink Current Limit | | 10 | | 40 | mA | VRO = 0 V | 4 |
| PGOOD Lower Threshold (with respect to VRO) | | -23.5 | -20 | -17.5 | % | | 4 |
| PGOOD Upper Threshold (with respect to VRO) | | 17.5 | 20 | 23.5 | % | | 4 |
| PGOOD Leakage Current | | | | 1 | µA | VTTS = VRI (PGOOD = True), PGOOD = VCC + 0.2 V | 4 |
| PGOOD Output Low Voltage | | | | 0.4 | V | IGOOD = 4 mA | 4 |
| EN Logic high threshold | VIH | 1.7 | | | V | EN Logic high | 4 |
| EN Logic low threshold | VIL | | | 0.3 | V | EN Logic low | 4 |
| EN Logic Leakage Current | IILEAK | -1 | | 1 | µA | EN pin, TA = +25°C | 4 |
| Thermal Shutdown Temperature | TSD | | 150 | | °C | | 4 |
| Thermal Shutdown Hysteresis | TSH | | 25 | | °C | | 4 |
| VTT Output DC Voltage | VOS | | 0.75 | | V | PVCC = 1.50 V, VRO = 0.75 V, ITT = 0 A | 3 |
| Soft-start Current Limit Timeout | TSS | | 200 | | µs | | 3 |
| PGOOD Start-up Delay | | | 2 | | ms | Start-up rising edge, VTTS within 15% of VRO | 4 |
| PGOOD = False Delay | | | 10 | | µs | VTTS is beyond ±20% PGOOD trip thresholds | 4 |
| Supply Voltage | VCC | 2.375 | | 5.5 | V | | 3 |
| Voltage Range VRO | VRO | -0.1 | | 1.8 | V | | 3 |
| Voltage Range VRI | VRI | 0.5 | | 1.8 | V | | 3 |
| Voltage Range PVCC, VTT, VTTS, EN, PGOOD | | -0.1 | | 3.5 | V | | 3 |
| Voltage Range PGND | | -0.1 | | 0.1 | V | | 3 |
| Operating Free-Air Temperature | TA | -40 | | 125 | °C | | 3 |
| VCC, PVCC, VTT, VTTS, VRI, VRO voltage | | -0.3 | | 6 | V | | 2 |
| EN, PGOOD voltage | | -0.3 | | 6 | V | | 2 |
| PGND to GND | | -0.3 | | 0.3 | V | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 2 |
| Operating Junction Temperature | TJ | | | 150 | °C | | 2 |
| ESD Capability, Human Body Model | ESDHBM | | | 2000 | V | | 2 |
| Junction-to-ambient thermal resistance | RθJA | | 53.9 | | °C/W | 1S2P JEDEC JESD51-7 PCB with 240 sqmm, 2 oz copper heat spreader | 2 |
| Junction-to-case (top) thermal resistance | RθJC(top) | | 95.5 | | °C/W | | 2 |
| Junction-to-board thermal resistance | RθJB | | 32.3 | | °C/W | 1mm from package | 2 |
| Junction-to-top thermal characterization | ψJT | | 4.3 | | °C/W | | 2 |
| Junction-to-case (bot) thermal resistance | RθJC(bot) | | 14.2 | | °C/W | | 2 |
| Power Rating | | | 1.92 | | W | TA = 25°C, 10-Pin DFN | 2 |
| Power Rating | | | 0.79 | | W | TA = +85°C, 10-Pin DFN | 2 |
## CAD (KiCad official)
- Symbol: `NCP51400MNTXG`
- Footprint: `Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm`
- 3D model: UDFN-10-EP(3x3) (KiCad packages3D, STEP)
- 3D model files: `ncp51400mntxg-etched.step` / `ncp51400mntxg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncp51400mntxg.step` / `ncp51400mntxg.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/ncp51400mntx-d.pdf) (9 pp, sha256 `0e49873ffb90fac6`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncp51400mntxg-datasheet.pdf)