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Contents

README

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NCP51200MNTXG

onsemi · Linear Voltage Regulators (LDO) · DFN-10(3x3)

NCP51200MNTXG from onsemi, in a DFN-10(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VRI input VTT external reference input, set to VDDQ/2 through a resistor network, with a 0.5 to 1.8 V range.
2 PVCC power_in Power input internally connected to the output source MOSFET, with a 1.1 to 3.5 V range.
3 VTT power_out Power output of the linear regulator.
4 PGND power_in Power ground internally connected to the output sink MOSFET.
5 VTTS input VTT sense input providing accurate remote feedback sensing of VTT, connected to the remote DDR termination bypass capacitors.
6 VRO output Independent buffered VTT reference output that sources and sinks over 5 mA, connected to GND through a 0.1 uF ceramic capacitor.
7 EN input CMOS-compatible shutdown control input, with logic high = enable and logic low = shutdown, connected to VDDQ for normal operation.
8 GND power_in Common ground.
9 PGOOD output Open-drain power good output that goes high when VTT is within ±20% of VRO, needing a pull-up resistor (100 kΩ in the text).
10 VCC power_in Analog power supply input (2.375 to 5.5 V recommended), connected to GND through a 1 to 4.7 uF ceramic capacitor.
11 THERMAL PAD passive Exposed pad for thermal connection, to be connected to the ground plane using multiple vias for maximum power dissipation.

Key specifications

Parameter Value
Manufacturer onsemi
Package DFN-10(3x3)
Category Power Management ICs
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VCC Supply Current IVCC 0.7 1 mA TA = +25°C, EN = 3.3 V, No Load 3
VCC Shutdown Current IVCC SHD 65 80 µA TA = +25°C, EN = 0 V, VRI = 0 V, No Load 3
VCC Shutdown Current IVCC SHD 200 400 µA TA = +25°C, EN = 0 V, VRI > 0.4 V, No Load 3
VCC UVLO Threshold VUVLO 2.15 2.3 2.375 V Wake-up, TA = +25°C 3
PVCC Supply Current IPVCC 1 50 µA TA = +25°C, EN = 3.3 V, No Load 3
PVCC Shutdown Current IPVCC SHD 0.1 50 µA TA = +25°C, EN = 0 V, No Load 3
VTT Output Offset Voltage VOS -15 15 mV VRO = 1.25 V (DDR1), ITT = 0 A 3
VTT Voltage Tolerance to VRO -25 25 mV -2 A ≤ ITT ≤ +2 A 3
Source Current Limit 3 4.5 A VTTS = 90% * VRO 3
Sink Current Limit 3.5 5.5 A VTTS = 110% * VRO 3
Discharge MOSFET On-resistance RDIS 18 25 Ω VRI = 0 V, VTT = 0.3 V, EN = 0 V, TA = +25°C 3
VRI Voltage Range VRI 0.5 1.8 V 3
VRI UVLO Voltage VRI UVLO 360 390 435 mV VRI rising 3
VRO Voltage Tolerance to VRI -15 15 mV IRO = ±10 mA, 0.6 V ≤ VRI ≤ 1.25 V 3
VRO Source Current Limit 10 40 mA VRO = 0 V 3
VRO Sink Current Limit 10 40 mA VRO = 0 V 3
PGOOD Lower Threshold (wrt VRO) -23.5 -20 -17.5 % 4
PGOOD Upper Threshold (wrt VRO) 17.5 20 23.5 % 4
PGOOD Output Low Voltage 0.4 V IGOOD = 4 mA 4
PGOOD Leakage Current 1 µA VTTS = VRI (PGOOD = True), PGOOD = VCC + 0.2 V 4
EN Logic Input Threshold High VIH 1.7 V EN Logic high 5
EN Logic Input Threshold Low VIL 0.3 V EN Logic low 5
EN Logic Leakage Current IILEAK -1 1 µA EN pin, TA = +25°C 5
VRI Input-bias Current IRI 1 µA EN = 3.3 V 3
Soft-start Current Limit Timeout TSS 200 µs 3
VRI UVLO Hysteresis VRI HYS 60 mV 3
VCC UVLO Hysteresis 50 mV Hysteresis 3
PGOOD Hysteresis 5 % 4
PGOOD Start-up Delay 2 ms Start-up rising edge, VTTS within 15% of VRO 4
PGOOD = False Delay 10 µs VTTS is beyond ±20% PGOOD trip thresholds 4
EN Hysteresis Voltage VENHYS 0.5 V EN pin 5
Thermal Shutdown Temperature TSD 150 °C 5
Thermal Shutdown Hysteresis TSH 25 °C 5
Supply Voltage VCC 2.375 5.5 V 3
VRO Voltage Range VRO -0.1 1.8 V 3
VRI Voltage Range VRI 0.5 1.8 V 3
PVCC, VTT, VTTS, EN, PGOOD Voltage Range -0.1 3.5 V 3
PGND Voltage Range PGND -0.1 0.1 V 3
Operating Free-Air Temperature TA -40 125 °C 3
VCC, PVCC, VTT, VTTS, VRI, VRO Voltage -0.3 6 V 2
EN, PGOOD Voltage -0.3 6 V 2
PGND to GND -0.3 0.3 V 2
Storage Temperature TSTG -55 150 °C 2
Operating Junction Temperature TJ 150 °C 2
ESD Capability, Human Body Model ESDHBM 2000 V 2
Power Rating 1.92 W TA = 25°C, 10-Pin DFN 2
Power Rating 0.79 W TA = +85°C, 10-Pin DFN 2
Junction-to-ambient thermal resistance RθJA 53.9 °C/W DFN 3x3mm 10 pins, 1S2P JEDEC JESD51-7 PCB 2
Junction-to-case (top) thermal resistance RθJC(top) 95.5 °C/W 2
Junction-to-board thermal resistance RθJB 32.3 °C/W 1mm from package 2
Junction-to-top thermal resistance ψJT 4.3 °C/W 2
Junction-to-case (bot) thermal resistance RθJC(bot) 14.2 °C/W 2

CAD (KiCad official)

  • Symbol: NCP51200MNTXG
  • Footprint: Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm
  • 3D model: DFN-10(3x3) (KiCad packages3D, STEP)
  • 3D model files: ncp51200mntxg-etched.step / ncp51200mntxg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncp51200mntxg.step / ncp51200mntxg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 f1f00267673b0f73, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF