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NCL30076AADR2G

onsemi · LED Drivers · SOIC-8

NCL30076AADR2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BIAS power_out This pin is the 3.3 V LDO output that biases the internal digital circuit, with a typical 3.30 V (3.23 to 3.37 V) and a pin voltage range of -0.3 to 5.5 V.
2 CSZCD input This pin senses the switch current and the inductor current zero-cross time, with a pin voltage range of -0.3 to 5.5 V and an over-current threshold of 1.0 V typical (0.9 to 1.1 V).
3 SG power_in Signal ground is routed close to the control pin circuits such as CSZCD, DIM and FB and serves as their reference.
4 FB output This pin is the feedback output of the feedback OTA, with a pin voltage range of -0.3 to 5.5 V and a minimum clamping voltage of 0.5 V typical (0.4 to 0.6 V).
5 DIM input This pin receives the dimming signal, with a pin voltage range of -0.3 to 5.5 V; the standby enabling and disabling thresholds are 75 mV and 100 mV typical.
6 VDD power_in This pin supplies the IC operating current, with a pin voltage range of -0.3 to 30 V, a turn-on threshold of 10.0 V typical and a turn-off threshold of 8.0 V typical, and an over-voltage protection threshold of 23 V typical.
7 DRV output This pin drives the external switch, with a pin voltage range of -0.3 to 30 V, a high level of 12 V typical at VDD = 15 V, and a low level of 0.2 V maximum.
8 PG power_in Power ground is routed close to the capacitors at the BIAS and VDD pins and serves as the power return.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category LED Drivers
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD, DRV Pin Voltage Range VMV(MAX) -0.3 30 V 4
DIM, FB, CSZCD, BIAS Pin Voltage Range VLV(MAX) -0.3 5.5 V 4
Maximum Power Dissipation PD(MAX) 550 mW TA < 50°C 4
Maximum Junction Temperature TJ(max) 150 °C 4
Storage Temperature Range TSTG -55 150 °C 4
ESD Capability, Human Body Model ESDHBM 2 kV JEDEC JESD22-A114 (Note 2) 4
ESD Capability, Charged Device Model ESDCDM 1 kV JEDEC JESD22-C101 (Note 2) 4
Junction-to-Ambient Thermal Impedance RθJA 145 °C/W 4
Junction Temperature (recommended operating range) TJ -40 125 °C 4
IC Turn-On Threshold Voltage VDD(ON) 9.3 10 10.7 V 4
IC Turn-Off Threshold Voltage VDD(OFF) 7.4 8 8.6 V 4
Startup Current IDD(ST) 250 400 A VDD = VDD(ON) − 1.6 V 4
Operating Current IDD(OP) 6.5 8 mA 4
Standby Current IDD(SB) 200 300 A 4
BIAS Voltage VBIAS 3.23 3.3 3.37 V 4
BIAS Voltage 3.25 3.3 3.35 V TJ = 25~100°C (Note 4) 4
DIM Voltage for 100% VREF VDIM(REF−MAX) 1.755 1.8 1.845 V VDIM = 1.9 V 4
DIM Voltage for 99% VREF VDIM(MAX−EFF) 1.73 1.78 1.827 V 4
Standby Enabling DIM Voltage VDIM(SB−ENA) 50 75 100 mV 4
Standby Disabling DIM Voltage VDIM(SB−DIS) 60 100 140 mV 4
Standby Delay Time tSB(DELAY) 9 10 11 ms 4
FB OTA Source Current IFB(SOURCE) -14 -11.5 -9 A IFB = (VLED − VREF) x gM(FB) x 10; VREF = 150 mV, VLED = 100 mV 5
FB OTA Sink Current IFB(SINK) 9 11.5 14 A IFB = (VLED − VREF) x gM(FB) x 10; VREF = 50 mV, VLED = 100 mV 5
FB OTA Transconductance gM(FB) 18 23 28 mho gM(FB) = IFB / {(VREF − VLED) x 10} 5
FB OTA High Voltage VFB(HIGH) 4.7 V VREF = 150 mV, VLED = 100 mV 5
FB Minimum Clamping Voltage VFB(CLP) 0.4 0.5 0.6 V VREF = 0 mV, VLED = 100 mV 5
CS Regulation VCS(REG−MAX) 155 160 165 mV 5
CS Current Limit Maximum VCS(LIM−MAX) 390 410 430 mV 5
CS Current Limit Minimum VCS(LIM−MIN) 145 155 165 mV 5
Leading Edge Blanking Time at Turn-on tLEB(TON) 360 400 440 ns 5
Maximum Ton Time tON(MAX) 45 50 55 s 5
Minimum Toff Time tOFF(MIN) 900 1250 1500 ns VFB = 3.8 V 5
Maximum Toff Time tOFF(MAX) 1.17 1.3 1.43 ms VFB = 0.5 V 5
Maximum FB Voltage for Min. Toff VFB(MAX−TOFF) 3.3 3.43 3.55 V 5
Minimum FB Voltage for Max. Toff VFB(MIN−TOFF) 0.9 1.1 1.3 V 5
Quasi-Resonant Delay Time tQR 0.45 0.5 0.55 s 5
DRV Low Voltage VDRV(LOW) 0.2 V 5
DRV High Voltage VDRV(HIGH) 11 12 13 V VDD = 15 V 5
DRV Rising Time tDRV(R) 60 100 145 ns CDRV = 3.3 nF 5
DRV Falling Time tDRV(F) 25 55 105 ns CDRV = 3.3 nF 5
Auto Restart Time at Protection tAR(PROT) 0.9 1 1.1 s 5
VDD Over Voltage Threshold Voltage VDD(OVP) 22 23 24 V 5
CS Over Current Protection Threshold VCS(OCP) 0.9 1 1.1 V 5
Thermal Shut Down Temperature TSD 130 150 170 °C 5
Thermal Shut Down Hysteresis TSD(HYS) 25 30 35 °C 5

CAD (KiCad official)

  • Symbol: NCL30076AADR2G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ncl30076aadr2g-etched.step / ncl30076aadr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncl30076aadr2g.step / ncl30076aadr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (15 pp, sha256 a6be36dcbcaee1f5, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF