component
NCEP85T16
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ncep85t16-etched.glb | 17d ago |
| ncep85t16-etched.step | 17d ago |
| ncep85t16-hero.glb | 17d ago |
| ncep85t16-hero.overlay.json | 17d ago |
| ncep85t16.glb | 17d ago |
| ncep85t16.kicad_mod | 17d ago |
| ncep85t16.kicad_sym | 17d ago |
| ncep85t16.lbr | 17d ago |
| ncep85t16.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
NCEP85T16
Wuxi NCE Power Semiconductor · MOSFETs · TO-220-3L
NCEP85T16 from Wuxi NCE Power Semiconductor, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) 2.5 to 4.5 V at ID=250μA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage 85 V, continuous drain current 160 A, pulsed 480 A. |
| 3 | S | passive | Source; RDS(ON) below 3.8 mΩ at VGS=10V, ID=80A, and body diode forward current IS of 160 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 160 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 112 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | 1 | |||
| Maximum Power Dissipation | PD | 220 | W | 1 | |||
| Single pulse avalanche energy | EAS | 1440 | mJ | Note 5: Tj=25℃, VDD=42.5V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.6 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=85V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 3.1 | 3.8 | mΩ | VGS=10V, ID=80A | 2 | |
| Forward Transconductance | gFS | 75 | S | VDS=10V, ID=80A | 2 | ||
| Diode Forward Current | IS | 160 | A | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 2 |
CAD (KiCad official)
- Symbol:
NCEP85T16 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
ncep85t16-etched.step/ncep85t16-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep85t16.step/ncep85t16.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
f9e913b9d170d5cf, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).