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NCEP60T15G
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP60T15G
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP60T15G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the source pins are internally common and carry the source current, with diode forward current rated 150 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the source pins are internally common and carry the source current, with diode forward current rated 150 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the source pins are internally common and carry the source current, with diode forward current rated 150 A. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 6 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 7 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 8 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
NCEP60T15G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep60t15g-etched.step/ncep60t15g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep60t15g.step/ncep60t15g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
3b43fe5e940c1029, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP60T15G
**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L
NCEP60T15G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the source pins are internally common and carry the source current, with diode forward current rated 150 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the source pins are internally common and carry the source current, with diode forward current rated 150 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the source pins are internally common and carry the source current, with diode forward current rated 150 A. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 6 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 7 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 8 | D | passive | Drain terminal of the MOSFET; the drain pins are internally common and carry continuous drain current rated 150 A (silicon limited) at TC=25°C with VDS rated 60 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `NCEP60T15G`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep60t15g-etched.step` / `ncep60t15g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep60t15g.step` / `ncep60t15g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588883980704239616) (7 pp, sha256 `3b43fe5e940c1029`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep60t15g-datasheet.pdf)