# NCEP60T12A

**Wuxi NCE Power Semiconductor** · MOSFETs · TO-220-3L

NCEP60T12A from Wuxi NCE Power Semiconductor, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 1.0 V min to 2.4 V max at 250 µA. |
| 2 | D | passive | Drain; VDS rated 60 V maximum with continuous drain current of 120 A (silicon limited) and pulsed current of 480 A, also connected to the mounting tab. |
| 3 | S | passive | Source; connects to the body diode anode and is the return path for the 120 A continuous drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous (Silicon Limited) | ID |  |  | 120 | A |  | 1 |
| Drain Current-Continuous | ID (100℃) |  |  | 100 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 480 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 180 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 500 | mJ | Note 5: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 0.83 |  | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 3.5 | 4 | mΩ | VGS=10V, ID=60A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 4 | 5 | mΩ | VGS=4.5V, ID=60A | 2 |
| Forward Transconductance | gFS | 40 |  |  | S | VDS=10V,ID=60A | 2 |
| Diode Forward Current | IS |  |  | 120 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `NCEP60T12A`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files: `ncep60t12a-etched.step` / `ncep60t12a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep60t12a.step` / `ncep60t12a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889823641800704) (7 pp, sha256 `3da747360c9f7d75`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ncep60t12a-datasheet.pdf)