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NCEP6090AGU
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP6090AGU
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP6090AGU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, connected internally with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected internally with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected internally with pins 1 and 2. |
| 4 | G | input | Gate terminal of the MOSFET; VGS absolute maximum is ±20 V, with threshold 1.0 to 2.2 V at ID=250μA. |
| 5 | D | passive | Drain terminal, connected internally with pins 6, 7, 8 and the exposed drain pad; VDS maximum 60 V. |
| 6 | D | passive | Drain terminal, connected internally with pins 5, 7, 8 and the exposed drain pad; VDS maximum 60 V. |
| 7 | D | passive | Drain terminal, connected internally with pins 5, 6, 8 and the exposed drain pad; VDS maximum 60 V. |
| 8 | D | passive | Drain terminal, connected internally with pins 5, 6, 7 and the exposed drain pad; VDS maximum 60 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
NCEP6090AGU - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep6090agu-etched.step/ncep6090agu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep6090agu.step/ncep6090agu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
7c89a10948cf9258, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP6090AGU
**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L
NCEP6090AGU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, connected internally with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected internally with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected internally with pins 1 and 2. |
| 4 | G | input | Gate terminal of the MOSFET; VGS absolute maximum is ±20 V, with threshold 1.0 to 2.2 V at ID=250μA. |
| 5 | D | passive | Drain terminal, connected internally with pins 6, 7, 8 and the exposed drain pad; VDS maximum 60 V. |
| 6 | D | passive | Drain terminal, connected internally with pins 5, 7, 8 and the exposed drain pad; VDS maximum 60 V. |
| 7 | D | passive | Drain terminal, connected internally with pins 5, 6, 8 and the exposed drain pad; VDS maximum 60 V. |
| 8 | D | passive | Drain terminal, connected internally with pins 5, 6, 7 and the exposed drain pad; VDS maximum 60 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `NCEP6090AGU`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep6090agu-etched.step` / `ncep6090agu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep6090agu.step` / `ncep6090agu.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589040147409350656) (7 pp, sha256 `7c89a10948cf9258`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep6090agu-datasheet.pdf)