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NCEP40T20A
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP40T20A
Wuxi NCE Power Semiconductor · MOSFETs · TO-220
NCEP40T20A from Wuxi NCE Power Semiconductor, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 2 V min to 3.8 V max at ID=250μA. |
| 2 | D | passive | Drain; rated VDS 40 V, continuous ID 200 A, pulsed IDM 800 A, and connected to the mounting tab. |
| 3 | S | passive | Source; main current return path, with diode forward current IS up to 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 200 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 150 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current (Note 1) | IDM | 800 | A | 1 | |||
| Maximum Power Dissipation | PD | 270 | W | TC=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Single pulse avalanche energy (Note 5) | EAS | 1692 | mJ | Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | 0.56 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3.8 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 1.3 | 1.6 | mΩ | VGS=10V, ID=100A | 2 | |
| Forward Transconductance | gFS | 90 | S | VDS=5V,ID=100A | 2 | ||
| Diode Forward Current (Note 2) | IS | 200 | A | 2 | |||
| Reverse Recovery Time | trr | 38 | nS | 2 | |||
| Reverse Recovery Charge | Qrr | 125 | nC | TJ = 25°C, IF = IS, di/dt = 100A/μs (Note3) | 2 | ||
| Diode Forward Voltage (Note 3) | VSD | 1.2 | V | VGS=0V,IS=100A | 2 | ||
| Derating factor | 1.8 | W/℃ | 1 |
CAD (KiCad official)
- Symbol:
NCEP40T20A - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ncep40t20a-etched.step/ncep40t20a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep40t20a.step/ncep40t20a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
e196ccf508832c07, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).