# NCEP40T15AGU

**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L

NCEP40T15AGU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; VDS max 40V, continuous drain current 150A (silicon limited). |
| 2 | S | passive | Source of the N-channel MOSFET; VDS max 40V, continuous drain current 150A (silicon limited). |
| 3 | S | passive | Source of the N-channel MOSFET; VDS max 40V, continuous drain current 150A (silicon limited). |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage limited to ±20V, threshold 2.0V to 4.0V at 250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 6 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 7 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 8 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 1.2 | 1.5 | mΩ | VGS=10V, ID=75A | 2 |
| Forward Transconductance | gFS | 80 |  |  | S | VDS=5V,ID=75A | 2 |
| Diode Forward Current | IS |  |  | 150 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous (Silicon Limited) | ID |  |  | 150 | A |  | 1 |
| Drain Current-Continuous | ID(100℃) |  |  | 106 | A | TC=100℃ | 1 |
| Pulsed Drain Current (Package Limited) | IDM |  |  | 400 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 135 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 1620 | mJ | Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 0.93 |  | ℃/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `NCEP40T15AGU`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep40t15agu-etched.step` / `ncep40t15agu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep40t15agu.step` / `ncep40t15agu.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589835154673078272) (6 pp, sha256 `f9440c6321781e5e`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ncep40t15agu-datasheet.pdf)