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Contents

README

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NCEP40T13GU

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP40T13GU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied to the other source pins 2 and 3.
2 S passive Source terminal of the N-channel MOSFET, tied to the other source pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied to the other source pins 1 and 2.
4 G input Gate terminal; VGS is rated ±20 V maximum, with threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250μA.
5 D passive Drain terminal, tied to pins 6-8 and the exposed drain pad; VDS is rated 40 V maximum.
6 D passive Drain terminal, tied to pins 5, 7, 8 and the exposed drain pad; VDS is rated 40 V maximum.
7 D passive Drain terminal, tied to pins 5, 6, 8 and the exposed drain pad; VDS is rated 40 V maximum.
8 D passive Drain terminal, tied to pins 5-7 and the exposed drain pad; VDS is rated 40 V maximum.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous (Silicon Limited) ID 130 A Silicon limited 1
Drain Current-Continuous (TC=100℃) ID(100℃) 100 A TC=100℃ 1
Pulsed Drain Current (Package Limited) IDM 400 A Package limited 1
Maximum Power Dissipation PD 80 W TC=25℃ 1
Single pulse avalanche energy (Note 5) EAS 600 mJ Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 1.8 2.3 mΩ VGS=10V, ID=65A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 2.8 3.6 mΩ VGS=4.5V, ID=65A 2
Input Capacitance Clss 3334 3990 PF 2
Output Capacitance Coss 650 750 PF 2
Reverse Transfer Capacitance Crss 57 68 PF VDS=20V,VGS=0V, F=1.0MHz 2
Total Gate Charge Qg 49 70 nC 2
Diode Forward Current (Note 2) IS 130 A 2
Thermal Resistance, Junction-to-Case (Note 2) RθJC 1.56 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 2

CAD (KiCad official)

  • Symbol: NCEP40T13GU
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep40t13gu-etched.step / ncep40t13gu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep40t13gu.step / ncep40t13gu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256 b811db327d6a016b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF