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NCEP40PT15D

Wuxi NCE Power Semiconductor · MOSFETs · TO-263-2L

NCEP40PT15D from Wuxi NCE Power Semiconductor, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive limit is VGS ±20 V, with RDS(ON) specified at VGS=-10 V and -4.5 V.
2 D passive Drain (center lead removed, connected to the exposed tab); VDS -40 V, continuous ID -150 A, pulsed IDM -600 A.
3 S passive Source; continuous diode forward current IS is -150 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.8 -1.2 -1.8 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 2.8 3.4 mΩ VGS=-10V, ID=-75A 2
Drain-Source On-State Resistance RDS(ON) 3.8 4.6 mΩ VGS=-4.5V, ID=-75A 2
Diode Forward Current IS -150 A 2
Drain-Source Voltage VDS -40 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -150 A TC=25℃ 1
Drain Current-Continuous ID(100℃) -120 A TC=100℃ 1
Pulsed Drain Current IDM -600 A 1
Maximum Power Dissipation PD 250 W TC=25℃ 1
Single pulse avalanche energy EAS 1345 mJ Tj=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.6 ℃/W Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) 2

CAD (KiCad official)

  • Symbol: NCEP40PT15D
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: ncep40pt15d-etched.step / ncep40pt15d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep40pt15d.step / ncep40pt15d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 954d02c5fa854f62, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF