component
NCEP40PT15D
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| ncep40pt15d-etched.step | 6h ago |
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| ncep40pt15d-hero.overlay.json | 6h ago |
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| page.json | 6h ago |
| README.md | 6h ago |
NCEP40PT15D
Wuxi NCE Power Semiconductor · MOSFETs · TO-263-2L
NCEP40PT15D from Wuxi NCE Power Semiconductor, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive limit is VGS ±20 V, with RDS(ON) specified at VGS=-10 V and -4.5 V. |
| 2 | D | passive | Drain (center lead removed, connected to the exposed tab); VDS -40 V, continuous ID -150 A, pulsed IDM -600 A. |
| 3 | S | passive | Source; continuous diode forward current IS is -150 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.8 | -1.2 | -1.8 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 2.8 | 3.4 | mΩ | VGS=-10V, ID=-75A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 3.8 | 4.6 | mΩ | VGS=-4.5V, ID=-75A | 2 | |
| Diode Forward Current | IS | -150 | A | 2 | |||
| Drain-Source Voltage | VDS | -40 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -150 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID(100℃) | -120 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -600 | A | 1 | |||
| Maximum Power Dissipation | PD | 250 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 1345 | mJ | Tj=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.6 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 2 |
CAD (KiCad official)
- Symbol:
NCEP40PT15D - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
ncep40pt15d-etched.step/ncep40pt15d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep40pt15d.step/ncep40pt15d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256
954d02c5fa854f62, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).