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NCEP40P80G
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP40P80G
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP40P80G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; continuous drain current is rated -80A at TC=25℃ for the device. |
| 2 | S | passive | Source of the P-channel MOSFET, internally common with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, internally common with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum gate-source voltage is ±20V, with a threshold of -1.1V to -2.2V. |
| 5 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is rated -40V. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the common drain with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the common drain with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the common drain with pins 5, 6 and 7; pulsed drain current is rated -320A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.6 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 6.3 | 7.5 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 9 | 12 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Diode Forward Current | IS | -80 | A | 2 | |||
| Drain-Source Voltage | VDS | -40 | V | Absolute Maximum Ratings, TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Absolute Maximum Ratings, TC=25℃ unless otherwise noted | 1 | |
| Drain Current-Continuous | ID(TC=25℃) | -80 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID(TC=100℃) | -56 | A | TC=100℃ | 1 | ||
| Drain Current-Continuous | ID(TA=25℃) | -12.8 | A | TA=25℃ | 1 | ||
| Pulsed Drain Current | IDM | -320 | A | 1 | |||
| Maximum Power Dissipation | PD(TC=25℃) | 75 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD(TA=25℃) | 2.3 | W | TA=25℃ | 1 | ||
| Derating factor | 0.6 | W/℃ | 1 | ||||
| Single pulse avalanche energy | EAS | 500 | mJ | Note 3: Tj=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.67 | ℃/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 55 | ℃/W | Note 1: device mounted on 1in² FR-4 board with 2oz copper, still air, TA=25℃ | 2 |
CAD (KiCad official)
- Symbol:
NCEP40P80G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep40p80g-etched.step/ncep40p80g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep40p80g.step/ncep40p80g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
2d5ce6958d277473, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP40P80G
**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L
NCEP40P80G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; continuous drain current is rated -80A at TC=25℃ for the device. |
| 2 | S | passive | Source of the P-channel MOSFET, internally common with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, internally common with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum gate-source voltage is ±20V, with a threshold of -1.1V to -2.2V. |
| 5 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is rated -40V. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the common drain with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the common drain with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the common drain with pins 5, 6 and 7; pulsed drain current is rated -320A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=-40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.6 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 6.3 | 7.5 | mΩ | VGS=-10V, ID=-20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 9 | 12 | mΩ | VGS=-4.5V, ID=-20A | 2 |
| Diode Forward Current | IS | | | -80 | A | | 2 |
| Drain-Source Voltage | VDS | | | -40 | V | Absolute Maximum Ratings, TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Absolute Maximum Ratings, TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID(TC=25℃) | | | -80 | A | TC=25℃ | 1 |
| Drain Current-Continuous | ID(TC=100℃) | | | -56 | A | TC=100℃ | 1 |
| Drain Current-Continuous | ID(TA=25℃) | | | -12.8 | A | TA=25℃ | 1 |
| Pulsed Drain Current | IDM | | | -320 | A | | 1 |
| Maximum Power Dissipation | PD(TC=25℃) | | | 75 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD(TA=25℃) | | | 2.3 | W | TA=25℃ | 1 |
| Derating factor | | | | 0.6 | W/℃ | | 1 |
| Single pulse avalanche energy | EAS | | | 500 | mJ | Note 3: Tj=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.67 | | ℃/W | | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 55 | | ℃/W | Note 1: device mounted on 1in² FR-4 board with 2oz copper, still air, TA=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `NCEP40P80G`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep40p80g-etched.step` / `ncep40p80g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep40p80g.step` / `ncep40p80g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589837770589315072) (6 pp, sha256 `2d5ce6958d277473`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep40p80g-datasheet.pdf)