component
NCEP30T17GU
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| ncep30t17gu-etched.step | 16d ago |
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NCEP30T17GU
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP30T17GU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three source pins (1-3) tied together. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain of the MOSFET, with VDS of 30 V and continuous ID of 170 A (silicon limited), and connected to the drain pad. |
| 6 | D | passive | Drain of the MOSFET, with VDS of 30 V and continuous ID of 170 A (silicon limited), and connected to the drain pad. |
| 7 | D | passive | Drain of the MOSFET, with VDS of 30 V and continuous ID of 170 A (silicon limited), and connected to the drain pad. |
| 8 | D | passive | Drain of the MOSFET, with VDS of 30 V and continuous ID of 170 A (silicon limited), and connected to the drain pad. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous (Silicon Limited) | ID | 170 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 125 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 680 | A | 1 | |||
| Maximum Power Dissipation | PD | 135 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 1350 | mJ | Note 1: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ=25℃; VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1.5 | μA | TJ=55℃; VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -80 | 80 | nA | VGS=±5V, VDS=0V | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 0.75 | 0.97 | 1.2 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 1 | 1.25 | 1.5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS | 80 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Clss | 5300 | 6890 | pF | VDS=15V, VGS=0V, F=1.0MHz | 2 | |
| Output Capacitance | Coss | 1800 | 2600 | pF | VDS=15V, VGS=0V, F=1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 100 | 200 | pF | VDS=15V, VGS=0V, F=1.0MHz | 2 | |
| Total Gate Charge | Qg | 90 | 126 | nC | VDS=15V, ID=20A, VGS=10V | 2 | |
| Gate-Source Charge | Qgs | 12 | 18 | nC | 2 | ||
| Gate-Drain Charge | Qgd | 13 | 19.5 | nC | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A | 2 | ||
| Diode Forward Current | IS | 170 | A | 2 | |||
| Reverse Recovery Time | trr | 30 | nS | TJ = 25°C, IF = IS, di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 110 | nC | 2 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 0.926 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
NCEP30T17GU - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep30t17gu-etched.step/ncep30t17gu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep30t17gu.step/ncep30t17gu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
ef065a93b71b4489, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).