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NCEP3045GU
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP3045GU
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP3045GU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); Drain-Source rated 30 V, continuous drain current 45 A. |
| 2 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); Drain-Source rated 30 V, continuous drain current 45 A. |
| 3 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); Drain-Source rated 30 V, continuous drain current 45 A. |
| 4 | G | input | Gate of the N-channel MOSFET, with a Gate-Source voltage limit of ±20 V and threshold VGS(th) of 1.0 V min to 2.0 V max. |
| 5 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 6 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 7 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 8 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
NCEP3045GU - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep3045gu-etched.step/ncep3045gu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep3045gu.step/ncep3045gu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
c7c45d89d3e3359a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP3045GU
**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L
NCEP3045GU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); Drain-Source rated 30 V, continuous drain current 45 A. |
| 2 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); Drain-Source rated 30 V, continuous drain current 45 A. |
| 3 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); Drain-Source rated 30 V, continuous drain current 45 A. |
| 4 | G | input | Gate of the N-channel MOSFET, with a Gate-Source voltage limit of ±20 V and threshold VGS(th) of 1.0 V min to 2.0 V max. |
| 5 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 6 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 7 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 8 | D | passive | Drain of the N-channel MOSFET (pins 5-8 are drain), with a VDS of 30 V max and a pulsed drain current of 125 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `NCEP3045GU`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep3045gu-etched.step` / `ncep3045gu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep3045gu.step` / `ncep3045gu.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589836477497704448) (6 pp, sha256 `c7c45d89d3e3359a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep3045gu-datasheet.pdf)