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NCEP25N10AK

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCEP25N10AK

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCEP25N10AK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive limit VGS ±20 V, threshold VGS(th) 1.1 V min to 2.5 V max at ID=250μA, RDS(ON) specified at VGS=10 V and 4.5 V.
2 D passive Drain, connected to the exposed tab (center lead is trimmed in the 2L package); VDS max 100 V, continuous ID 35 A, pulsed IDM 140 A.
3 S passive Source; continuous diode forward current IS max 35 A with body-diode VSD 1.2 V max at IS=20 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 35 A 1
Drain Current-Continuous ID (100℃) 25 A TC=100℃ 1
Pulsed Drain Current IDM 140 A 1
Maximum Power Dissipation PD 105 W 1
Single pulse avalanche energy EAS 97 mJ Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Derating factor 0.7 W/℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.43 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.1 1.7 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 21 25 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 26 30 mΩ VGS=4.5V, ID=20A 2
Diode Forward Current IS 35 A 2
Forward Transconductance gFS 19 S VDS=5V,ID=20A 2
Input Capacitance Clss 1317.6 PF VDS=50V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 123.9 PF VDS=50V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 19.3 PF VDS=50V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 13 nS 2
Turn-on Rise Time tr 15 nS 2
Turn-Off Delay Time td(off) 22 nS 2
Turn-Off Fall Time tf 6 nS VDD=50V,ID=20A VGS=10V,RG=3Ω 2
Total Gate Charge Qg 27.6 nC 2
Gate-Source Charge Qgs 5.5 nC 2
Gate-Drain Charge Qgd 6.9 nC VDS=50V,ID=20A, VGS=10V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=20A 2
Reverse Recovery Time trr 40 nS 2
Reverse Recovery Charge Qrr 85 nC TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) 2

CAD (KiCad official)

  • Symbol: NCEP25N10AK
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ncep25n10ak-etched.step / ncep25n10ak-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep25n10ak.step / ncep25n10ak.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256 ca58fe244c29bdc2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF