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NCEP1520K

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs ncep1520k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
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ncep1520k-hero.glb ncep1520k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
ncep1520k-hero.overlay.json ncep1520k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
ncep1520k.glb Publish 0.1.0 · Ray 24d ago
ncep1520k.kicad_mod Publish 0.1.0 · Ray 24d ago
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package.json ncep1520k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json ncep1520k: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md ncep1520k: specified limits as data (metadata.characteristics, 32 rows from the datasheet) · Ray 17d ago

NCEP1520K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCEP1520K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20 V and the threshold VGS(th) is 2.5 V min to 4.5 V max at ID=250μA.
2 D passive Drain, shown on the center stub and on the exposed tab; VDS is rated at 150 V and continuous ID at 20 A.
3 S passive Source; the body diode carries a continuous forward current IS of 20 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 20 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 14 A TC=100℃ 1
Pulsed Drain Current IDM 80 A 1
Maximum Power Dissipation PD 68 W 1
Single pulse avalanche energy EAS 65 mJ Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) 1
Drain Source voltage slope, VDS ≤120 V dv/dt 50 V/ns VDS ≤120 V 1
Drain Source voltage slope, VDS ≤120 V, ISD<ID dv/dt 50 V/ns VDS ≤120 V, ISD<ID 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=150V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 3.3 4.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 59 65 mΩ VGS=10V, ID=10A 2
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 20 A 2
Gate resistance RG 4.5 Ω 2
Input Capacitance Clss 600 PF 2
Output Capacitance Coss 74.7 PF 2
Reverse Transfer Capacitance Crss 10.8 PF VDS=75V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 9.5 nS 2
Turn-on Rise Time tr 5.5 nS 2
Turn-Off Delay Time td(off) 12.5 nS 2
Turn-Off Fall Time tf 3 nS VDD=75V, RL=7.5Ω, VGS=10V,RG=3Ω 2
Total Gate Charge Qg 12 nC 2
Gate-Source Charge Qgs 5.7 nC 2
Gate-Drain Charge Qgd 2.7 nC VDS=75V,ID=10A, VGS=10V 2
Reverse Recovery Time trr 29 nS 2
Reverse Recovery Charge Qrr 130 nC TJ = 25°C, IF = IS di/dt = 100A/μs(Note3) 2
Thermal Resistance, Junction-to-Case RθJC 2.2 ℃/W Note 2 2

CAD (KiCad official)

  • Symbol: NCEP1520K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ncep1520k-etched.step / ncep1520k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep1520k.step / ncep1520k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 fbf14db2af32ecf8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF