component
NCEP1520K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ncep1520k: specified limits as data (metadata.characteristics, 32 rows from the datasheet)
2 files changed
+431−1
README.md+39@@ -21,6 +21,45 @@ NCEP1520K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin desc | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 150 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | 20 | A | | 1 |+| Drain Current-Continuous (TC=100℃) | ID (100℃) | | | 14 | A | TC=100℃ | 1 |+| Pulsed Drain Current | IDM | | | 80 | A | | 1 |+| Maximum Power Dissipation | PD | | | 68 | W | | 1 |+| Single pulse avalanche energy | EAS | | | 65 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 1 |+| Drain Source voltage slope, VDS ≤120 V | dv/dt | | | 50 | V/ns | VDS ≤120 V | 1 |+| Drain Source voltage slope, VDS ≤120 V, ISD<ID | dv/dt | | | 50 | V/ns | VDS ≤120 V, ISD<ID | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=150V,VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 2.5 | 3.3 | 4.5 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 59 | 65 | mΩ | VGS=10V, ID=10A | 2 |+| Forward Transconductance | gFS | 15 | | | S | VDS=5V,ID=10A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=10A | 2 |+| Diode Forward Current | IS | | | 20 | A | | 2 |+| Gate resistance | RG | | 4.5 | | Ω | | 2 |+| Input Capacitance | Clss | | 600 | | PF | | 2 |+| Output Capacitance | Coss | | 74.7 | | PF | | 2 |+| Reverse Transfer Capacitance | Crss | | 10.8 | | PF | VDS=75V,VGS=0V, F=1.0MHz | 2 |+| Turn-on Delay Time | td(on) | | 9.5 | | nS | | 2 |+| Turn-on Rise Time | tr | | 5.5 | | nS | | 2 |+| Turn-Off Delay Time | td(off) | | 12.5 | | nS | | 2 |+| Turn-Off Fall Time | tf | | 3 | | nS | VDD=75V, RL=7.5Ω, VGS=10V,RG=3Ω | 2 |+| Total Gate Charge | Qg | | 12 | | nC | | 2 |+| Gate-Source Charge | Qgs | | 5.7 | | nC | | 2 |+| Gate-Drain Charge | Qgd | | 2.7 | | nC | VDS=75V,ID=10A, VGS=10V | 2 |+| Reverse Recovery Time | trr | | 29 | | nS | | 2 |+| Reverse Recovery Charge | Qrr | | 130 | | nC | TJ = 25°C, IF = IS di/dt = 100A/μs(Note3) | 2 |+| Thermal Resistance, Junction-to-Case | RθJC | | 2.2 | | ℃/W | Note 2 | 2 |+ ## CAD (KiCad official) - Symbol: `NCEP1520K`
page.json+392−1@@ -148,6 +148,397 @@ "Package": "TO-252-2L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "fbf14db2af32ecf8",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous (TC=100℃)",+ "symbol": "ID (100℃)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 14,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 68,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω (Note 5)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Source voltage slope, VDS ≤120 V",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤120 V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Source voltage slope, VDS ≤120 V, ISD<ID",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤120 V, ISD<ID",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 150,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=150V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": 3.3,+ "max": 4.5,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 59,+ "max": 65,+ "conditions": "VGS=10V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 15,+ "typ": null,+ "max": null,+ "conditions": "VDS=5V,ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V,IS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 4.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Clss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 600,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 74.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 10.8,+ "max": null,+ "conditions": "VDS=75V,VGS=0V, F=1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 9.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 5.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 12.5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "nS",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "VDD=75V, RL=7.5Ω, VGS=10V,RG=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.7,+ "max": null,+ "conditions": "VDS=75V,ID=10A, VGS=10V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 29,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 130,+ "max": null,+ "conditions": "TJ = 25°C, IF = IS di/dt = 100A/μs(Note3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "Note 2",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +580,4 @@ "visibility": { "public": true }-}+}