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NCEP1520BK

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCEP1520BK

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCEP1520BK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS limited to ±12 V (absolute maximum), with RDS(ON) specified at VGS=4.5V and 2.5V.
2 D passive Drain (center lead, also connected to the exposed tab); VDS max 150 V, continuous ID 20 A, pulsed IDM 80 A.
3 S passive Source; diode forward current IS up to 20 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=150V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 52 60 mΩ VGS=4.5V, ID=10A 2
Drain-Source On-State Resistance RDS(ON) 57 70 mΩ VGS=2.5V, ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 20 A 2
Drain-Source Voltage VDS 150 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 20 A TA=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 14 A TC=100℃ 1
Pulsed Drain Current IDM 80 A TA=25℃ 1
Maximum Power Dissipation PD 68 W TA=25℃ 1
Single pulse avalanche energy EAS 64 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 2.2 ℃/W Surface mounted on FR4 board, t ≤ 10 sec 1
Derating factor 0.45 W/℃ 1
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Input Capacitance Clss 1473 PF VDS=75V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 76.4 PF VDS=75V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 12.1 PF VDS=75V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 10.5 nS VDD=75V, RL=7.5Ω, VGS=4.5V,RG=3Ω 2
Turn-on Rise Time tr 6 nS VDD=75V, RL=7.5Ω, VGS=4.5V,RG=3Ω 2
Turn-Off Delay Time td(off) 14.5 nS VDD=75V, RL=7.5Ω, VGS=4.5V,RG=3Ω 2
Turn-Off Fall Time tf 3.5 nS VDD=75V, RL=7.5Ω, VGS=4.5V,RG=3Ω 2
Total Gate Charge Qg 16.4 nC VDS=75V,ID=10A, VGS=4.5V 2
Gate-Source Charge Qgs 3.3 nC VDS=75V,ID=10A, VGS=4.5V 2
Gate-Drain Charge Qgd 3.8 nC VDS=75V,ID=10A, VGS=4.5V 2
Reverse Recovery Time trr 29.5 nS TJ = 25°C, IF = IS, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 132 nC TJ = 25°C, IF = IS, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCEP1520BK
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ncep1520bk-etched.step / ncep1520bk-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep1520bk.step / ncep1520bk.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 638e3ef81d83caa8, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF