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NCEP1505S
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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP1505S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCEP1505S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, pin 1 of SOP-8. |
| 2 | S | passive | Source of the N-channel MOSFET, pin 2 of SOP-8. |
| 3 | S | passive | Source of the N-channel MOSFET, pin 3 of SOP-8. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±20 V maximum, threshold 2.5 V to 4.5 V at 250 µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 6, 7 and 8. |
| 6 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=150V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.3 | 4.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 55 | 65 | mΩ | VGS=10V, ID=5.1A | 2 | |
| Input Capacitance | Clss | 618 | 850 | PF | 2 | ||
| Output Capacitance | Coss | 81 | 105 | PF | 2 | ||
| Reverse Transfer Capacitance | Crss | 6.5 | 9 | PF | VDS=75V,VGS=0V, F=1.0MHz | 2 | |
| Turn-on Delay Time | td(on) | 12.8 | 14 | nS | 2 | ||
| Turn-on Rise Time | tr | 1.4 | 8.5 | nS | 2 | ||
| Turn-Off Delay Time | td(off) | 12.5 | 21 | nS | 2 | ||
| Turn-Off Fall Time | tf | 2.5 | 8 | nS | VDD=75V, ID=5.1A VGS=10V,RG=3Ω | 2 | |
| Total Gate Charge | Qg | 12.8 | 18 | nC | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=5.1A | 2 | ||
| Diode Forward Current | IS | 5.1 | A | 2 | |||
| Reverse Recovery Time | trr | 58 | 95 | nS | 2 | ||
| Reverse Recovery Charge | Qrr | 69 | 110 | nC | TJ = 25°C, IF = IS di/dt = 100A/μs | 2 | |
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 5.1 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 3.6 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | Note 1 | 1 | ||
| Single pulse avalanche energy | EAS | 60 | mJ | Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 41.7 | ℃/W | Note 2: device mounted on 1in2 FR-4 board, 2oz copper, still air, TA=25℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 25 | ℃/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
NCEP1505S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ncep1505s-etched.step/ncep1505s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep1505s.step/ncep1505s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
dd7a1c6aa1875c5f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP1505S
**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8
NCEP1505S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, pin 1 of SOP-8. |
| 2 | S | passive | Source of the N-channel MOSFET, pin 2 of SOP-8. |
| 3 | S | passive | Source of the N-channel MOSFET, pin 3 of SOP-8. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±20 V maximum, threshold 2.5 V to 4.5 V at 250 µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 6, 7 and 8. |
| 6 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, VDS 150 V maximum, shorted internally with pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=150V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.3 | 4.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 55 | 65 | mΩ | VGS=10V, ID=5.1A | 2 |
| Input Capacitance | Clss | | 618 | 850 | PF | | 2 |
| Output Capacitance | Coss | | 81 | 105 | PF | | 2 |
| Reverse Transfer Capacitance | Crss | | 6.5 | 9 | PF | VDS=75V,VGS=0V, F=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 12.8 | 14 | nS | | 2 |
| Turn-on Rise Time | tr | | 1.4 | 8.5 | nS | | 2 |
| Turn-Off Delay Time | td(off) | | 12.5 | 21 | nS | | 2 |
| Turn-Off Fall Time | tf | | 2.5 | 8 | nS | VDD=75V, ID=5.1A VGS=10V,RG=3Ω | 2 |
| Total Gate Charge | Qg | | 12.8 | 18 | nC | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=5.1A | 2 |
| Diode Forward Current | IS | | | 5.1 | A | | 2 |
| Reverse Recovery Time | trr | | 58 | 95 | nS | | 2 |
| Reverse Recovery Charge | Qrr | | 69 | 110 | nC | TJ = 25°C, IF = IS di/dt = 100A/μs | 2 |
| Drain-Source Voltage | VDS | | | 150 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 5.1 | A | | 1 |
| Drain Current-Continuous | ID (100℃) | | | 3.6 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | Note 1 | 1 |
| Single pulse avalanche energy | EAS | | | 60 | mJ | Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Maximum Power Dissipation | PD | | | 5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 3 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 41.7 | ℃/W | Note 2: device mounted on 1in2 FR-4 board, 2oz copper, still air, TA=25℃ | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 25 | ℃/W | Note 2 | 1 |
## CAD (KiCad official)
- Symbol: `NCEP1505S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ncep1505s-etched.step` / `ncep1505s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep1505s.step` / `ncep1505s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590228096944680960) (7 pp, sha256 `dd7a1c6aa1875c5f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep1505s-datasheet.pdf)