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NCEP095N10AG
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP095N10AG
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP095N10AG from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, connected internally to pins 2 and 3 per the schematic. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected internally to pins 1 and 3 per the schematic. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected internally to pins 1 and 2 per the schematic. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with absolute maximum VGS of ±20 V and threshold VGS(th) of 1.1 V min to 2.5 V max at 250 µA. |
| 5 | D | passive | Drain terminal, rated VDS 100 V and continuous ID 60 A, connected to the exposed drain pad together with pins 6, 7 and 8. |
| 6 | D | passive | Drain terminal, rated VDS 100 V and continuous ID 60 A, connected to the exposed drain pad together with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal, rated VDS 100 V and continuous ID 60 A, connected to the exposed drain pad together with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal, rated VDS 100 V and continuous ID 60 A, connected to the exposed drain pad together with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 60 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 43 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 80 | W | TC=25℃ | 1 | ||
| Derating factor | 0.64 | W/℃ | TC=25℃ | 1 | |||
| Single pulse avalanche energy | EAS | 260 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.56 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.7 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 8.5 | 9.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 10.5 | 12 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Forward Transconductance | gFS | 45 | S | VDS=5V,ID=30A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=30A | 2 | ||
| Diode Forward Current | IS | 60 | A | 2 | |||
| Input Capacitance | Clss | 2600 | pF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 230 | pF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 27 | pF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 13 | nS | VDD=50V,ID=30A, VGS=10V,RG=1.6Ω | 2 | ||
| Turn-on Rise Time | tr | 10 | nS | VDD=50V,ID=30A, VGS=10V,RG=1.6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | nS | VDD=50V,ID=30A, VGS=10V,RG=1.6Ω | 2 | ||
| Turn-Off Fall Time | tf | 8 | nS | VDD=50V,ID=30A, VGS=10V,RG=1.6Ω | 2 | ||
| Total Gate Charge | Qg | 54 | nC | VDS=50V,ID=30A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDS=50V,ID=30A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 14 | nC | VDS=50V,ID=30A, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 55 | nS | TJ = 25°C, IF = 30A, di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 98 | nC | TJ = 25°C, IF = 30A, di/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
NCEP095N10AG - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep095n10ag-etched.step/ncep095n10ag-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep095n10ag.step/ncep095n10ag.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
714ccb8282de5be8, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).