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Contents

README

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NCEP035N60AG

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP035N60AG from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied to pins 2 and 3 (schematic S1).
2 S passive Source terminal of the N-channel MOSFET, tied to pins 1 and 3 (schematic S2).
3 S passive Source terminal of the N-channel MOSFET, tied to pins 1 and 2 (schematic S3).
4 G input Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V maximum.
5 D passive Drain terminal, connected to the exposed drain pad and pins 6-8; VDS is 60 V maximum.
6 D passive Drain terminal, connected to the exposed drain pad and pins 5, 7 and 8; continuous ID is 110 A.
7 D passive Drain terminal, connected to the exposed drain pad and pins 5, 6 and 8; pulsed IDM is 440 A.
8 D passive Drain terminal, connected to the exposed drain pad and pins 5-7 (schematic D8).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
Drain Current-Continuous (Silicon Limited) ID 110 A Silicon limited, TC=25℃ unless otherwise noted 1
Drain Current-Continuous (TC=100℃) ID (100℃) 77 A TC=100℃ 1
Pulsed Drain Current IDM 440 A 1
Maximum Power Dissipation PD 85 W TC=25℃ unless otherwise noted 1
Single pulse avalanche energy EAS 520 mJ Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 2.8 3.5 mΩ VGS=10V, ID=55A 2
Drain-Source On-State Resistance RDS(ON) 3.5 4.5 mΩ VGS=4.5V, ID=55A 2
Forward Transconductance gFS 40 S VDS=5V,ID=55A 2
Diode Forward Current IS 110 A 2
Thermal Resistance, Junction-to-Case RθJC 1.47 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec. 1

CAD (KiCad official)

  • Symbol: NCEP035N60AG
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep035n60ag-etched.step / ncep035n60ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep035n60ag.step / ncep035n60ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 6b5f575a808b694d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF