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NCEP02T10D

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Wuxi NCE Power Semiconductor MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCEP02T10D

Wuxi NCE Power Semiconductor · MOSFETs · TO-263-2L

NCEP02T10D from Wuxi NCE Power Semiconductor, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20 V absolute maximum and threshold VGS(th) 2.5 V min to 4.5 V max at ID=250μA.
2 D passive Drain, shown as pin (2) in the schematic and connected to the exposed tab since the TO-263-2L has no middle lead; VDS rated 200 V and continuous ID 100 A.
3 S passive Source; carries the continuous current up to 100 A and is the body-diode anode side (IS 100 A max).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 100 A TC=25℃ (table header) 1
Drain Current-Continuous (TC=100℃) ID (100℃) 70.7 A TC=100℃ 1
Pulsed Drain Current IDM 400 A 1
Maximum Power Dissipation PD 300 W 1
Single pulse avalanche energy EAS 1216 mJ Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω (Note 1) 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 4.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 10 12 mΩ VGS=10V, ID=50A 2
Forward Transconductance gFS 70 S VDS=10V,ID=50A 2
Diode Forward Current IS 100 A 2
Thermal Resistance, Junction-to-Case RθJC 0.5 ℃/W 2

CAD (KiCad official)

  • Symbol: NCEP02T10D
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: ncep02t10d-etched.step / ncep02t10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep02t10d.step / ncep02t10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 ae4465413aab2686, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF