component

NCEP026N10D

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsncep026n10dfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ncep026n10d / README.md
History Download
Ray Publish 0.1.0 295b10b 14d ago

NCEP026N10D

Wuxi NCE Power Semiconductor · MOSFETs · TO-263

NCEP026N10D from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum VGS of ±20 V and a threshold VGS(th) of 2.0 V min to 4.0 V max at 250 µA.
2 D passive Drain, which is the exposed mounting tab and the center position on the package; rated for VDS 100 V and continuous ID 200 A.
3 S passive Source; carries the continuous drain current of up to 200 A, and the body diode forward current IS is 200 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V Printed as ±20 V 1
Drain Current-Continuous ID 200 A TC=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 142 A TC=100℃ 1
Pulsed Drain Current IDM 800 A 1
Maximum Power Dissipation PD 300 W 1
Single pulse avalanche energy EAS 2300 mJ Note 5: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (TO-263) RDS(ON) 2.2 2.6 mΩ VGS=10V, ID=100A 2
Forward Transconductance gFS 90 S VDS=5V,ID=100A 2
Diode Forward Current IS 200 A 2
Thermal Resistance, Junction-to-Case RθJC 0.5 ℃/W Note 2 2
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W Note 2: 1in2 FR-4 board, 2oz copper, still air, TA=25°C 2
Gate resistance RG 2.5 Ω 2
Input Capacitance Clss 17500 PF VDS=50V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 1100 PF VDS=50V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 50 PF VDS=50V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 34 nS VDD=50V,ID=100A VGS=10V,RG=1.6Ω 2
Turn-on Rise Time tr 27 nS 2
Turn-Off Delay Time td(off) 78 nS 2
Turn-Off Fall Time tf 30 nS 2
Total Gate Charge Qg 240 nC VDS=50V,ID=100A, VGS=10V 2
Gate-Source Charge Qgs 75 nC 2
Gate-Drain Charge Qgd 60 nC 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=100A 2
Reverse Recovery Time trr 101 nS TJ = 25°C, IF = 100A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 280 nC 2

CAD (KiCad official)

  • Symbol: NCEP026N10D
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ncep026n10d-etched.step / ncep026n10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep026n10d.step / ncep026n10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 9ed91804ba29087c, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF