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NCEP026N10
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Wuxi NCE Power Semiconductor MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP026N10
Wuxi NCE Power Semiconductor · MOSFETs · TO-220
NCEP026N10 from Wuxi NCE Power Semiconductor, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal that controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain terminal rated for a drain-source voltage of 100 V and a continuous drain current of 200 A (pulsed 800 A). |
| 3 | S | passive | Source terminal, the current return path of the N-channel MOSFET, with a diode forward current (IS) of 200 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
NCEP026N10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ncep026n10-etched.step/ncep026n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep026n10.step/ncep026n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256
9ed91804ba29087c, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP026N10
**Wuxi NCE Power Semiconductor** · MOSFETs · TO-220
NCEP026N10 from Wuxi NCE Power Semiconductor, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal that controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain terminal rated for a drain-source voltage of 100 V and a continuous drain current of 200 A (pulsed 800 A). |
| 3 | S | passive | Source terminal, the current return path of the N-channel MOSFET, with a diode forward current (IS) of 200 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `NCEP026N10`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `ncep026n10-etched.step` / `ncep026n10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep026n10.step` / `ncep026n10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](docs/ncep026n10-datasheet.pdf) (8 pp, sha256 `9ed91804ba29087c`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep026n10-datasheet.pdf)