main
Ray Set visibility: public 4307058 22h ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ncep025n60g",
  "title": "NCEP025N60G",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "ncep025n60g",
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    "extractor-text"
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    "mpn": "NCEP025N60G",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "DFN5X6-8L",
    "pin_count": 9,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/864622431235883262ae2e72f7aabe73.pdf",
    "parts": {
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      "model_3d_step_plain": "ncep025n60g.step",
      "lbr": "ncep025n60g.lbr"
    },
    "distributor_links": {
      "lcsc": "C7462066"
    },
    "distributor_check": {
      "checked_at": "2026-11-05T21:02:44Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET (pin 1 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET (pin 2 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET (pin 3 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET with a gate-source voltage limit of ±20 V and a threshold of 2.0 V min to 4.0 V max at 250 µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (pin 5 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (pin 6 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (pin 7 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (pin 8 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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          "exposed pad 9 added from the footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 8,
        "cost_usd": 0.2377,
        "at": "2026-11-05T21:02:28"
      },
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        "pages": 8,
        "sha256": "a2aedf21344a63cb",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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      "footprint": "viewers/footprint.html"
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-11-05",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "role": "eda",
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        "sha256": "7fcbcc14790a3203dc35b2fb0fc66ad9baf07f83d3954f6003f01de769056832",
        "checked": "2026-11-05",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "DFN5X6-8L",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "a2aedf21344a63cb2bae1cc8eb3097c6e2ee2e0ee00b4faeb0c6f4f9f84f1509",
      "rows": [
        {
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          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous (Silicon Limited)",
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          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
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          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Drain Current-Continuous (TC=100℃)",
          "symbol": "ID (100℃)",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 115,
          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
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          "kind": "absolute_maximum",
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          "max": 660,
          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 145,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 540,
          "conditions": "Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 0.86,
          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=60V, VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 3,
          "max": 4,
          "conditions": "VDS=VGS, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 2.2,
          "max": 2.5,
          "conditions": "VGS=10V, ID=82.5A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
          "min": 45,
          "typ": null,
          "max": null,
          "conditions": "VDS=5V, ID=82.5A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 165,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_triggers": [
    "ncep025n60g"
  ],
  "discovery_pitch": "NCEP025N60G (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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}