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NCEP025N60G
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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NCEP025N60G
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP025N60G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pin 2 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pin 3 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET with a gate-source voltage limit of ±20 V and a threshold of 2.0 V min to 4.0 V max at 250 µA. |
| 5 | D | passive | Drain terminal (pin 5 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 6 | D | passive | Drain terminal (pin 6 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 7 | D | passive | Drain terminal (pin 7 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 8 | D | passive | Drain terminal (pin 8 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous (Silicon Limited) | ID | 165 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 115 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 660 | A | 1 | |||
| Maximum Power Dissipation | PD | 145 | W | 1 | |||
| Single pulse avalanche energy | EAS | 540 | mJ | Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.86 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 2.2 | 2.5 | mΩ | VGS=10V, ID=82.5A | 2 | |
| Forward Transconductance | gFS | 45 | S | VDS=5V, ID=82.5A | 2 | ||
| Diode Forward Current | IS | 165 | A | 2 |
CAD (KiCad official)
- Symbol:
NCEP025N60G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep025n60g-etched.step/ncep025n60g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep025n60g.step/ncep025n60g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256
a2aedf21344a63cb, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP025N60G
**Wuxi NCE Power Semiconductor** · MOSFETs · DFN5X6-8L
NCEP025N60G from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pin 2 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pin 3 of the S1-S3 source group); VDS rating 60 V, continuous ID 165 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET with a gate-source voltage limit of ±20 V and a threshold of 2.0 V min to 4.0 V max at 250 µA. |
| 5 | D | passive | Drain terminal (pin 5 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 6 | D | passive | Drain terminal (pin 6 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 7 | D | passive | Drain terminal (pin 7 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 8 | D | passive | Drain terminal (pin 8 of the D5-D8 drain group, connected to the exposed drain pad); VDS 60 V max, pulsed ID 660 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous (Silicon Limited) | ID | | | 165 | A | | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) | | | 115 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 660 | A | | 1 |
| Maximum Power Dissipation | PD | | | 145 | W | | 1 |
| Single pulse avalanche energy | EAS | | | 540 | mJ | Note 5: Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 0.86 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 2.2 | 2.5 | mΩ | VGS=10V, ID=82.5A | 2 |
| Forward Transconductance | gFS | 45 | | | S | VDS=5V, ID=82.5A | 2 |
| Diode Forward Current | IS | | | 165 | A | | 2 |
## CAD (KiCad official)
- Symbol: `NCEP025N60G`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `ncep025n60g-etched.step` / `ncep025n60g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep025n60g.step` / `ncep025n60g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](docs/ncep025n60g-datasheet.pdf) (8 pp, sha256 `a2aedf21344a63cb`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep025n60g-datasheet.pdf)