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Contents

README

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NCEP02580D

Wuxi NCE Power Semiconductor · IGBTs · TO-263-2L

NCEP02580D from Wuxi NCE Power Semiconductor, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 2.5 V min to 4.5 V max at 250 µA.
2 D passive Drain (also the exposed tab); VDS 250 V max, continuous drain current 80 A at TC=25℃, pulsed 320 A.
3 S passive Source; carries up to 80 A continuous, body diode forward current IS 80 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 250 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=250V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 3.5 4.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 16 18.5 mΩ VGS=10V, ID=40A 2
Forward Transconductance gFS 70 S VDS=10V,ID=40A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=80A 2
Diode Forward Current IS 80 A 2
Drain-Source Voltage VDS 250 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 80 A TC=25℃ 1
Drain Current-Continuous (100℃) ID (100℃) 56.6 A TC=100℃ 1
Pulsed Drain Current IDM 320 A TC=25℃ 1
Maximum Power Dissipation PD 300 W TC=25℃ 1
Derating factor 2 W/℃ 1
Single pulse avalanche energy EAS 1200 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.5 ℃/W 2
Input Capacitance Ciss 5400 PF VDS=125V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 329 PF VDS=125V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 12 PF VDS=125V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 18 nS VDD=125V,ID=40A VGS=10V,RG=4.7Ω 2
Turn-on Rise Time tr 26 nS VDD=125V,ID=40A VGS=10V,RG=4.7Ω 2
Turn-Off Delay Time td(off) 41 nS VDD=125V,ID=40A VGS=10V,RG=4.7Ω 2
Turn-Off Fall Time tf 11 nS VDD=125V,ID=40A VGS=10V,RG=4.7Ω 2
Total Gate Charge Qg 76.7 nC VDS=125V,ID=40A, VGS=10V 2
Gate-Source Charge Qgs 22.7 nC VDS=125V,ID=40A, VGS=10V 2
Gate-Drain Charge Qgd 20 nC VDS=125V,ID=40A, VGS=10V 2
Reverse Recovery Time trr 140 nS TJ = 25°C, IF = 40A di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 600 nC TJ = 25°C, IF = 40A di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCEP02580D
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: ncep02580d-etched.step / ncep02580d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep02580d.step / ncep02580d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 74b72261dee8e3b8, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF