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NCEP02515K

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCEP02515K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCEP02515K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V (VGS(th) 2.5 V min to 4.5 V max at ID=250 µA).
2 D passive Drain, shown as the center stub and the metal tab; VDS rated 250 V and continuous ID 15 A.
3 S passive Source; continuous diode forward current IS is 15 A max.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 250 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 15 A TA=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 10.6 A TC=100℃ 1
Pulsed Drain Current IDM 60 A TA=25℃ 1
Maximum Power Dissipation PD 140 W TA=25℃ 1
Derating factor 0.93 W/℃ 1
Single pulse avalanche energy EAS 80 mJ Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.1 ℃/W Surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 250 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=250V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 3.5 4.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 200 220 mΩ VGS=10V, ID=15A 2
Forward Transconductance gFS 15 S VDS=5V,ID=15A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=15A 2
Diode Forward Current IS 15 A 2
Input Capacitance Ciss 475 PF VDS=125V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 34 PF VDS=125V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 1.2 PF VDS=125V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 4 nS VDD=125V, RL=8Ω, VGS=10V, RG=3Ω 2
Turn-on Rise Time tr 5 nS VDD=125V, RL=8Ω, VGS=10V, RG=3Ω 2
Turn-Off Delay Time td(off) 10 nS VDD=125V, RL=8Ω, VGS=10V, RG=3Ω 2
Turn-Off Fall Time tf 2 nS VDD=125V, RL=8Ω, VGS=10V, RG=3Ω 2
Total Gate Charge Qg 8.9 nC VDS=125V,ID=15A, VGS=10V 2
Gate-Source Charge Qgs 3.3 nC VDS=125V,ID=15A, VGS=10V 2
Gate-Drain Charge Qgd 2.5 nC VDS=125V,ID=15A, VGS=10V 2
Reverse Recovery Time trr 25 nS TJ = 25°C, IF = IS, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 110 nC TJ = 25°C, IF = IS, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCEP02515K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: ncep02515k-etched.step / ncep02515k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep02515k.step / ncep02515k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 2a085dea25515799, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF