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Ray Publish 0.1.0 8c9b201 17d ago

NCEP0218K

Wuxi NCE Power Semiconductor · MOSFETs · TO-252

NCEP0218K from Wuxi NCE Power Semiconductor, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and VGS(th) of 2.5 V min to 4.5 V max at ID=250μA.
2 D passive Drain, the short center lead, which is common with the exposed drain tab; VDS is rated 200 V and continuous ID is 18 A.
3 S passive Source; the body diode IS is rated 18 A continuous, with VSD of 1.2 V max at IS=18A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2.5 3.5 4.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 145 155 mΩ VGS=10V, ID=18A 2
Forward Transconductance gFS 15 S VDS=5V,ID=18A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=18A 2
Diode Forward Current IS 18 A 2
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 18 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 12.7 A TC=100℃ 1
Pulsed Drain Current IDM 72 A 1
Maximum Power Dissipation PD 140 W 1
Single pulse avalanche energy EAS 80 mJ Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Derating factor 0.93 W/℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.07 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: NCEP0218K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ncep0218k-etched.step / ncep0218k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep0218k.step / ncep0218k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 c591de363fcbd1c0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF