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NCEP0178AK
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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ncep0178ak: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
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NCEP0178AK
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCEP0178AK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | D | passive | Drain (center pin, also connected to the tab); VDS 100 V max and continuous ID 78 A. |
| 3 | S | passive | Source; continuous diode forward current IS of 78 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 78 | A | TC=25℃ unless otherwise noted | 1 | ||
| Drain Current-Continuous | ID (100℃) | 60 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Maximum Power Dissipation | PD | 125 | W | 1 | |||
| Single pulse avalanche energy | EAS | 320 | mJ | Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.2 | ℃/W | Note 2 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 7.2 | 8.5 | mΩ | VGS=10V, ID=39A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 9.5 | 12 | mΩ | VGS=4.5V, ID=39A | 2 | |
| Forward Transconductance | gFS | 40 | S | VDS=10V,ID=39A | 2 | ||
| Input Capacitance | Clss | 4200 | 5480 | pF | 2 | ||
| Output Capacitance | Coss | 354 | 425 | pF | 2 | ||
| Reverse Transfer Capacitance | Crss | 23 | 30 | pF | VDS=50V,VGS=0V, F=1.0MHz | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=78A | 2 | ||
| Diode Forward Current | IS | 78 | A | 2 |
CAD (KiCad official)
- Symbol:
NCEP0178AK - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
ncep0178ak-etched.step/ncep0178ak-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep0178ak.step/ncep0178ak.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
54c43c437bbebfc3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP0178AK
**Wuxi NCE Power Semiconductor** · MOSFETs · TO-252-2L
NCEP0178AK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | D | passive | Drain (center pin, also connected to the tab); VDS 100 V max and continuous ID 78 A. |
| 3 | S | passive | Source; continuous diode forward current IS of 78 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 78 | A | TC=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID (100℃) | | | 60 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 320 | A | | 1 |
| Maximum Power Dissipation | PD | | | 125 | W | | 1 |
| Single pulse avalanche energy | EAS | | | 320 | mJ | Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 1.2 | ℃/W | Note 2 | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 7.2 | 8.5 | mΩ | VGS=10V, ID=39A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 9.5 | 12 | mΩ | VGS=4.5V, ID=39A | 2 |
| Forward Transconductance | gFS | 40 | | | S | VDS=10V,ID=39A | 2 |
| Input Capacitance | Clss | | 4200 | 5480 | pF | | 2 |
| Output Capacitance | Coss | | 354 | 425 | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 23 | 30 | pF | VDS=50V,VGS=0V, F=1.0MHz | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=78A | 2 |
| Diode Forward Current | IS | | | 78 | A | | 2 |
## CAD (KiCad official)
- Symbol: `NCEP0178AK`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `ncep0178ak-etched.step` / `ncep0178ak-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep0178ak.step` / `ncep0178ak.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884621630558208) (7 pp, sha256 `54c43c437bbebfc3`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep0178ak-datasheet.pdf)