NCEP0160AG

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  "slug": "ncep0160ag",
  "title": "NCEP0160AG",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "NCEP0160AG",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "DFN5X6-8L",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, one of three source pins (1-3) in the DFN5X6-8L package."
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      {
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      {
        "number": "3",
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      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±18 V."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
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      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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          "exposed pad 9 added from the footprint",
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        "cost_usd": 0.1506,
        "at": "2026-10-10T00:25:42"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "DFN5X6-8L",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
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          "max": null,
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          "max": 1,
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          "name": "Gate-Body Leakage Current",
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          "conditions": "VGS=±18V,VDS=0V",
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          "max": 2.2,
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          "name": "Drain-Source On-State Resistance",
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          "name": "Forward Transconductance",
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          "name": "Gate-Source Voltage",
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        {
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          "conditions": "Package Limited; TC=25℃ unless otherwise noted",
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        {
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          "conditions": "TC=100℃",
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        {
          "name": "Pulsed Drain Current",
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          "name": "Maximum Power Dissipation",
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        {
          "name": "Single pulse avalanche energy",
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          "unit": "mJ",
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          "conditions": "Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω",
          "source_page": 1,
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          "name": "Operating Junction and Storage Temperature Range",
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        {
          "name": "Derating factor",
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          "kind": "thermal",
          "unit": "W/℃",
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        {
          "name": "Thermal Resistance, Junction-to-Case",
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          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
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          "max": null,
          "conditions": "Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec",
          "source_page": 1,
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    "name": "Ray",
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