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Ray ncep0160ag: specified limits as data (metadata.characteristics, 18 rows from the datasheet) 15aa4a7 17d ago

NCEP0160AG

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP0160AG from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, one of three source pins (1-3) in the DFN5X6-8L package.
2 S passive Source of the N-channel MOSFET, one of three source pins (1-3) in the DFN5X6-8L package.
3 S passive Source of the N-channel MOSFET, one of three source pins (1-3) in the DFN5X6-8L package.
4 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±18 V.
5 D passive Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad.
6 D passive Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad.
7 D passive Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad.
8 D passive Drain of the MOSFET (VDS 100 V, ID 60 A package limited), one of four drain pins (5-8) connected to the exposed drain pad.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -200 200 nA VGS=±18V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 7.2 8.5 mΩ VGS=10V, ID=30A 2
Drain-Source On-State Resistance RDS(ON) 9.5 11 mΩ VGS=4.5V, ID=30A 2
Forward Transconductance gFS 40 S VDS=10V,ID=30A 2
Diode Forward Current IS 60 A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -18 18 V 1
Drain Current-Continuous (Package Limited) ID 60 A Package Limited; TC=25℃ unless otherwise noted 1
Drain Current-Continuous ID(100℃) 56 A TC=100℃ 1
Pulsed Drain Current IDM 240 A 1
Maximum Power Dissipation PD 105 W 1
Single pulse avalanche energy EAS 250 mJ Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Derating factor 0.84 W/℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.2 ℃/W Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: NCEP0160AG
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep0160ag-etched.step / ncep0160ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep0160ag.step / ncep0160ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 3505c99961af49b9, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF