component
NCE82H140
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| nce82h140-etched.glb | 16d ago |
| nce82h140-etched.step | 16d ago |
| nce82h140-hero.glb | 16d ago |
| nce82h140-hero.overlay.json | 16d ago |
| nce82h140.glb | 16d ago |
| nce82h140.kicad_mod | 16d ago |
| nce82h140.kicad_sym | 16d ago |
| nce82h140.lbr | 16d ago |
| nce82h140.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
NCE82H140
Wuxi NCE Power Semiconductor · MOSFETs · TO-220-3L
NCE82H140 from Wuxi NCE Power Semiconductor, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V, with a typical threshold of 3V (2V min, 4V max) at ID=250μA. |
| 2 | D | passive | Drain; connected to the tab, with VDS up to 82V and continuous current of 140A (99A at TC=100℃). |
| 3 | S | passive | Source; main current return path for the 140A continuous drain current, with the body diode forward current IS of 140A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 82 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 140 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 99 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | 1 | |||
| Maximum Power Dissipation | PD | 220 | W | 1 | |||
| Single pulse avalanche energy (Note 5) | EAS | 1500 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case (Note 2) | RθJc | 0.68 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 82 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=82V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4.3 | 5.2 | mΩ | VGS=10V, ID=20A | 2 | |
| Forward Transconductance | gFS | 65 | S | VDS=5V,ID=20A | 2 | ||
| Diode Forward Voltage (Note 3) | VSD | 1.2 | V | VGS=0V,IS=140A | 2 | ||
| Diode Forward Current (Note 2) | IS | 140 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE82H140 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
nce82h140-etched.step/nce82h140-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce82h140.step/nce82h140.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
627b9911d1ee1173, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).