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NCE60P28AK

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Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE60P28AK

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE60P28AK from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with RDS(ON) <48mΩ at VGS=-10V and <55mΩ at VGS=-4.5V, threshold -1 to -2.0 V at ID=-250μA.
2 D passive Drain (center lead and exposed tab); VDS max -60 V, continuous ID -28 A, pulsed IDM -112 A.
3 S passive Source; body diode forward voltage typically -1.2 V at IS=-20A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -28 A 1
Drain Current-Continuous ID (100℃) -19.8 A TC=100℃ 1
Pulsed Drain Current IDM -112 A 1
Maximum Power Dissipation PD 80 W 1
Single pulse avalanche energy EAS 55 mJ Note 5: Tj=25℃,VDD=-30V,VG=-10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 40 48 mΩ VGS=-10V, ID=-20A 2
Drain-Source On-State Resistance RDS(ON) 48 55 mΩ VGS=-4.5V, ID=-20A 2
Diode Forward Current IS -18 A 2
Thermal Resistance, Junction-to-Case RθJC 1.88 ℃/W 1

CAD (KiCad official)

  • Symbol: NCE60P28AK
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce60p28ak-etched.step / nce60p28ak-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce60p28ak.step / nce60p28ak.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 e440f83ed3989877, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF