component
NCE60P12K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNCE60P12K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE60P12K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, VGS rated ±20 V, with threshold VGS(th) of -1 V min to -2.2 V max at ID=-250μA. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated -60 V and continuous ID -12 A at TC=25℃. |
| 3 | S | passive | Source; body diode conducts to the drain with continuous forward current IS of -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -12 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | -8.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 50 | mJ | Note 5 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.5 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 84 | 100 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 100 | 125 | mΩ | VGS=-4.5V, ID=-8A | 2 | |
| Drain Current-Continuous (diode forward current) | IS | -12 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE60P12K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce60p12k-etched.step/nce60p12k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce60p12k.step/nce60p12k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
1e5fa1aec0bbfa71, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).