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NCE60P05BY

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Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE60P05BY

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L

NCE60P05BY from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20V, with threshold VGS(th) of -1.0V to -2.0V at ID=-250μA.
2 S passive Source of the P-channel MOSFET; continuous drain current is -5A (pulsed -20A) and body diode forward current IS is -5A.
3 D passive Drain; drain-source voltage is rated -60V with RDS(ON) below 65mΩ at VGS=-10V.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -5 A 1
Pulsed Drain Current IDM -20 A 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 83.3 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250μA 1
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 55 65 mΩ VGS=-10V, ID=-5A 2
Drain-Source On-State Resistance RDS(ON) 70 85 mΩ VGS=-4.5V, ID=-5A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-5A 2
Diode Forward Current IS -5 A Note 2: surface mounted on FR4 board, t ≤ 10 sec 2

CAD (KiCad official)

  • Symbol: NCE60P05BY
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: nce60p05by-etched.step / nce60p05by-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce60p05by.step / nce60p05by.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 1cfa2c15b4a493de, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF